| # | Country | Total Patents | |
|---|---|---|---|
| #1 | United Kingdom | 7 | |
| #2 | WIPO (World Intellectual Property Organization) | 7 | |
| #3 | United States | 6 | |
| #4 | China | 4 | |
| #5 | EPO (European Patent Office) | 4 | |
| #6 | Hong Kong | 1 | |
| #7 | Republic of Korea | 1 | |
| #8 | Singapore | 1 |
| # | Industry | |
|---|---|---|
| #1 | Semiconductors | |
| #2 | Surface technology and coating |
| # | Technology | |
|---|---|---|
| #1 | Semiconductor devices | |
| #2 | Single-crystal-growth | |
| #3 | Coating metallic material |
| # | Name | Total Patents |
|---|---|---|
| #1 | Ward Peter | 25 |
| #2 | Udrea Florin | 5 |
| #3 | Lophitis Neophytos | 5 |
| #4 | Trajkovic Tanya | 5 |
| #5 | Peter Ward | 3 |
| #6 | Ward Peter John | 2 |
| Publication | Filing date | Title |
|---|---|---|
| WO2018060679A1 | 3c-sic igbt | |
| US2017018634A1 | 3C-SiC IGBT | |
| GB201615909D0 | Method of reducing device contact resistance | |
| US2016247967A1 | Gallium nitride on 3C—SiC composite wafer | |
| GB201509160D0 | Bipolar power semiconductor transistor | |
| GB201500558D0 | Wafer bow reduction | |
| GB201416403D0 | High voltage semiconductor devices | |
| WO2015040369A1 | 3C-SiC TRANSISTOR | |
| GB201204826D0 | Forming silicon dioxide on silicon carbide | |
| GB201118502D0 | Silicon carbide epitaxy | |
| GB201410481D0 | Silicon carbide epitaxy |