CN111341887A
|
|
GaN base layer and preparation method and application thereof
|
CN111244237A
|
|
Ultraviolet LED epitaxial structure and growth method thereof
|
CN111063771A
|
|
Preparation method of LED chip and LED chip
|
CN110739374A
|
|
Growth method of light-emitting diodes and light-emitting diode
|
CN110335928A
|
|
Manufacturing method of chip and device
|
CN107195742A
|
|
The preparation method and ultraviolet LED of ultraviolet LED
|
CN106848008A
|
|
A kind of method that utilization V-type defect improves LED light electrical characteristics
|
CN106784179A
|
|
A kind of LED preparation methods, LED and chip
|
CN103746053A
|
|
Purple LED (light-emitting diode) preparation method, purple LED and chip
|
CN103681995A
|
|
Led chip preparation method and led chip
|
CN103560188A
|
|
Structure design and fabrication method of multi-section wide-spectrum LED
|
CN103560185A
|
|
LED epitaxy structure
|
CN103560181A
|
|
Light-emitting diode epitaxial growth method
|
CN103367577A
|
|
Epitaxial wafer of high-brightness GaN-based LED (Light Emitting Diode) and manufacturing method thereof
|
CN103400908A
|
|
Surface-roughened light-emitting diode and manufacturing method thereof
|
CN103367580A
|
|
LED (Light-Emitting Diode) chip with high luminous efficiency and manufacturing method thereof
|
CN103094442A
|
|
Nitride light emitting diode (LED) and preparation method thereof
|
CN103094437A
|
|
Manufacturing method of high-power light-emitting diode (LED) chips
|