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EPITOP OPTOELECTRONIC CO LTD

Overview
  • Total Patents
    20
  • GoodIP Patent Rank
    151,220
  • Filing trend
    ⇩ 100.0%
About

EPITOP OPTOELECTRONIC CO LTD has a total of 20 patent applications. It decreased the IP activity by 100.0%. Its first patent ever was published in 2013. It filed its patents most often in China, Republic of Korea and United States. Its main competitors in its focus markets semiconductors and surface technology and coating are NAKAZAWA HARUO, ANVIL SEMICONDUCTORS LTD and TEKCORE CO LTD.

Patent filings in countries

World map showing EPITOP OPTOELECTRONIC CO LTDs patent filings in countries
# Country Total Patents
#1 China 18
#2 Republic of Korea 1
#3 United States 1

Patent filings per year

Chart showing EPITOP OPTOELECTRONIC CO LTDs patent filings per year from 1900 to 2020

Focus industries

Focus technologies

Top inventors

# Name Total Patents
#1 Kang Jian 20
#2 Zheng Yuanzhi 12
#3 Chen Xiangdong 12
#4 Liang Xudong 11
#5 Huang Xiaohui 8
#6 Zhou Debao 6
#7 Xu Qi 4
#8 Chen Jing 4
#9 Li Xiaoying 4
#10 Yang Tianpeng 3

Latest patents

Publication Filing date Title
CN111341887A GaN base layer and preparation method and application thereof
CN111244237A Ultraviolet LED epitaxial structure and growth method thereof
CN111063771A Preparation method of LED chip and LED chip
CN110739374A Growth method of light-emitting diodes and light-emitting diode
CN110335928A Manufacturing method of chip and device
CN107195742A The preparation method and ultraviolet LED of ultraviolet LED
CN106848008A A kind of method that utilization V-type defect improves LED light electrical characteristics
CN106784179A A kind of LED preparation methods, LED and chip
CN103746053A Purple LED (light-emitting diode) preparation method, purple LED and chip
CN103681995A Led chip preparation method and led chip
CN103560188A Structure design and fabrication method of multi-section wide-spectrum LED
CN103560185A LED epitaxy structure
CN103560181A Light-emitting diode epitaxial growth method
CN103367577A Epitaxial wafer of high-brightness GaN-based LED (Light Emitting Diode) and manufacturing method thereof
CN103400908A Surface-roughened light-emitting diode and manufacturing method thereof
CN103367580A LED (Light-Emitting Diode) chip with high luminous efficiency and manufacturing method thereof
CN103094442A Nitride light emitting diode (LED) and preparation method thereof
CN103094437A Manufacturing method of high-power light-emitting diode (LED) chips