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LATTICE POWER JIANGXI CORP

Overview
  • Total Patents
    185
  • GoodIP Patent Rank
    33,535
  • Filing trend
    ⇩ 14.0%
About

LATTICE POWER JIANGXI CORP has a total of 185 patent applications. It decreased the IP activity by 14.0%. Its first patent ever was published in 2006. It filed its patents most often in China, WIPO (World Intellectual Property Organization) and United States. Its main competitors in its focus markets semiconductors, machines and optics are PARK BYOUNG-KEON, HUAIAN AUCKSUN OPTOELECTRONICS TECH CO LTD and HANGZHOU SILAN AZURE CO LTD.

Patent filings per year

Chart showing LATTICE POWER JIANGXI CORPs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Jiang Fengyi 88
#2 Wang Li 87
#3 Fang Wenqing 47
#4 Fengyi Jiang 32
#5 Xiong Chuanbing 27
#6 Li Wang 26
#7 Tang Yingwen 20
#8 Mo Chunlan 17
#9 Chuanbing Xiong 17
#10 Liu Junlin 16

Latest patents

Publication Filing date Title
CN111106171A AlN barrier layer, AlN/GaN HEMT epitaxial structure and growth method thereof
CN111106210A Mini LED chip preparation method
CN110993751A Preparation method of micro LED chip
CN111106170A AlGaN barrier layer in AlGaN/GaN HEMT and growing method thereof
CN111106058A High-voltage LED chip and preparation method thereof
CN111063772A High-luminous-efficiency ultraviolet LED epitaxial structure
CN111063675A Mini LED display module preparation method
CN111029447A Sapphire planar epitaxial wafer for Micro-LED and growth method thereof
CN110957402A MicroLED chip and preparation method thereof
CN110459656A Ultraviolet LED epitaxial wafer and preparation method thereof
CN110473940A The epitaxial structure of ultraviolet LED
CN110459654A Ultraviolet LED epitaxial structure
CN110518106A A kind of thin-film LED preparation method
CN110518105A Flip LED chips reflecting electrode preparation method and its structure
CN109755231A White-light LED chip
CN109797375A The ameliorative way of silicon substrate epitaxial wafer the thickness uniformity
CN109848122A The cleaning method of SiC panel surface AlN film layer
CN109768125A Silicon substrate epitaxial wafer growth method
CN109768137A Light emitting diode (LED) chip with vertical structure and preparation method thereof
CN109765764A Figure overlay method when chip is done over again