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HUAIAN AUCKSUN OPTOELECTRONICS TECH CO LTD

Overview
  • Total Patents
    29
  • GoodIP Patent Rank
    54,283
  • Filing trend
    ⇧ 166.0%
About

HUAIAN AUCKSUN OPTOELECTRONICS TECH CO LTD has a total of 29 patent applications. It increased the IP activity by 166.0%. Its first patent ever was published in 2017. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, surface technology and coating and micro-structure and nano-technology are PARK BYOUNG-KEON, HANGZHOU SILAN AZURE CO LTD and SU MICHAEL Z.

Patent filings in countries

World map showing HUAIAN AUCKSUN OPTOELECTRONICS TECH CO LTDs patent filings in countries
# Country Total Patents
#1 China 29

Patent filings per year

Chart showing HUAIAN AUCKSUN OPTOELECTRONICS TECH CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Zhu Guanghui 13
#2 Lu Ling 12
#3 Wang Sibo 7
#4 Liu Jian 7
#5 Liao Hanzhong 7
#6 Li Zhiyong 6
#7 Zhang Xiangfei 6
#8 Chen Ming 6
#9 Zeng Haijun 4
#10 Ren Liangliang 4

Latest patents

Publication Filing date Title
CN111900235A Preparation method of Mini LED chip
CN111799358A Preparation method of LED chip with Sn bonding pad
CN111799356A Design method of LED chip with bump bonding pad
CN111799354A Preparation method of MiniLED chip with high thrust value
CN111799353A Method for preparing MiniLED chip
CN111799357A Preparation method of LED chip with tin bonding pad
CN111883626A Flip-chip light-emitting diode capable of changing forward light intensity and lateral light intensity and preparation method thereof
CN109360877A There is one kind In and Al to adulterate, the low temperature P type GaN epitaxial method of In gradual change growth
CN109326695A A kind of epitaxial wafer and growing method improving gallium nitride based LED light-emitting diode luminance
CN109390440A A kind of epitaxial wafer and preparation method of light emitting diode
CN109346575A A kind of LED epitaxial slice and preparation method thereof
CN109326692A A kind of gallium nitride based LED epitaxial slice and preparation method thereof
CN109300851A A kind of low temperature p-type GaN epitaxy piece with Al and In doped growing
CN109346574A A kind of epitaxial wafer and growing method improving gallium nitride based LED light-emitting diode luminance
CN109300852A A kind of luminance raising LED luminescent layer epitaxial structure and preparation method thereof
CN109103311A A kind of epitaxial wafer and growing method reducing gallium nitride based LED LED operation voltage
CN109300853A A kind of novel light-emitting diode Quantum Well and preparation method thereof
CN109192824A A kind of epitaxial wafer and growing method promoting gallium nitride based light emitting diode brightness
CN109346585A A kind of epitaxial wafer and growing method reducing gallium nitride based light emitting diode operating voltage
CN109103310A A kind of epitaxial wafer and growing method promoting gallium nitride based LED light emitting diode antistatic effect