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HANGZHOU SILAN AZURE CO LTD

Overview
  • Total Patents
    110
  • GoodIP Patent Rank
    37,146
  • Filing trend
    ⇩ 50.0%
About

HANGZHOU SILAN AZURE CO LTD has a total of 110 patent applications. It decreased the IP activity by 50.0%. Its first patent ever was published in 2005. It filed its patents most often in China, WIPO (World Intellectual Property Organization) and United States. Its main competitors in its focus markets semiconductors, surface technology and coating and measurement are PARK BYOUNG-KEON, HUAIAN AUCKSUN OPTOELECTRONICS TECH CO LTD and HC SEMITEK CORP.

Patent filings in countries

World map showing HANGZHOU SILAN AZURE CO LTDs patent filings in countries

Patent filings per year

Chart showing HANGZHOU SILAN AZURE CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Li Dongsheng 62
#2 Jiang Zhongyong 56
#3 Ding Haisheng 45
#4 Zhang Haoxiang 31
#5 Ma Xingang 30
#6 Zhongyong Jiang 26
#7 Haoxiang Zhang 19
#8 Li Fangfang 18
#9 Dongsheng Li 17
#10 Wang Yang 13

Latest patents

Publication Filing date Title
CN111710764A LED chip, high-voltage LED chip and manufacturing method thereof
CN111490138A L ED chip and manufacturing method thereof
CN111477682A Gallium nitride transistor and method for manufacturing the same
CN110767789A Light emitting diode and preparation method thereof
CN109860023A Gallium nitride transistor and its manufacturing method
CN108110126A The production method of pad structure and the production method of flip LED chips
CN108110127A The production method of pad structure and the production method of flip LED chips
CN105910990A Figure test method
CN105655463A LED (Light Emitting Diode) structure and manufacturing method thereof
CN105304786A Light emitting diode (LED) chip and fabrication method thereof
CN105261679A Manufacturing method of GaN substrate
CN105355763A Passivation protecting structure, light emitting diode and manufacturing method thereof
CN105206730A LED substrate and manufacturing method thereof
CN104882521A Substrate for inversely installed LED chip and manufacturing method thereof
CN104835891A Flip led chip and manufacturing method thereof
CN104835889A Substrate for flip LED chips and making method thereof
CN104835890A Substrate and epitaxial wafer for flip LED chips and making methods thereof
CN104810440A Flip LED (Light Emitting Diode) chip and manufacturing method thereof
CN104835888A Epitaxial wafer structure for flip LED chips and making method thereof
CN104835884A LED structure, and manufacturing method and luminescence method thereof