ASCATRON AB has a total of 34 patent applications. It increased the IP activity by 240.0%. Its first patent ever was published in 2009. It filed its patents most often in Sweden, WIPO (World Intellectual Property Organization) and EPO (European Patent Office). Its main competitors in its focus markets semiconductors and environmental technology are RI YUE GUANG SEMICONDUCTOR MFG, GEM SERVICES INC and ONO TAKAHIDE.
# | Country | Total Patents | |
---|---|---|---|
#1 | Sweden | 10 | |
#2 | WIPO (World Intellectual Property Organization) | 10 | |
#3 | EPO (European Patent Office) | 6 | |
#4 | United States | 5 | |
#5 | China | 3 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Environmental technology |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Climate change mitigation in goods production |
# | Name | Total Patents |
---|---|---|
#1 | Reshanov Sergey | 27 |
#2 | Schöner Adolf | 26 |
#3 | Elahipanah Hossein | 25 |
#4 | Thierry-Jebali Nicolas | 23 |
#5 | Kaplan Wlodzimierz | 7 |
#6 | Vieider Christian | 7 |
#7 | Schoner Adolf | 3 |
#8 | Wlodzimierz Kaplan | 2 |
#9 | Christian Vieider | 2 |
#10 | Adolf Schöner | 2 |
Publication | Filing date | Title |
---|---|---|
SE543075C2 | Crystal efficient SiC device wafer production | |
SE542607C2 | MOSFET in SiC with self-aligned lateral MOS channel | |
SE1850601A1 | Buried grid with shield in a wide band gap material | |
SE1751137A1 | A double grid structure | |
SE1751140A1 | Feeder design with high current capability | |
SE1751139A1 | Integration of a schottky diode with a mosfet | |
SE1751138A1 | A method for manufacturing a grid | |
SE1751136A1 | A concept for silicon carbide power devices | |
EP3311392A1 | Filling of deep recesses | |
SE1550821A1 | SiC SUPER-JUNCTIONS | |
EP2175497A2 | Avalanche photodiode for ultraviolet photon detection |