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KOREA ADVANCED NANO FAB CT

Overview
  • Total Patents
    123
  • GoodIP Patent Rank
    57,577
About

KOREA ADVANCED NANO FAB CT has a total of 123 patent applications. Its first patent ever was published in 2008. It filed its patents most often in Republic of Korea, WIPO (World Intellectual Property Organization) and United States. Its main competitors in its focus markets semiconductors, environmental technology and optics are SEMICONDUCTOR LEADING EDGE TEC, PROCESS LAB MICRON CO LTD and BEIJING ZHONGKE FEIHONG SCIENCE & TECHNOLOGY CO LTD.

Patent filings in countries

World map showing KOREA ADVANCED NANO FAB CTs patent filings in countries

Patent filings per year

Chart showing KOREA ADVANCED NANO FAB CTs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Kang Ho Kwan 58
#2 Shin Hyun Beom 38
#3 Ko Chul Gi 34
#4 Sung Ho Kun 31
#5 Park Won Kyu 30
#6 Jun Dong Hwan 30
#7 Shin Chan Soo 29
#8 Park Hyeong Ho 27
#9 Kim Shin Keun 18
#10 Park Kyung Ho 17

Latest patents

Publication Filing date Title
KR20150141915A metal or metal oxide asymmetric nanostructures using variable shaped imprint stamp
KR20160110742A manufacturing method of metal-oxide nano particle patterned and metal-oxide nano particle patterned thereby
KR20160084966A Metal oxide complex structure using meta-UV imprinting and photolithography and metal oxide complex structure thereby
KR20160084965A Metal oxide complex structure using meta-thermal imprinting and photolithography and metal oxide complex structure thereby
KR20160083256A Monolithic multi channel semiconductor power device and manufacturing method thereof
KR20160083257A manufacturing method of white LED using nano-structure and white LED thereby
KR101604307B1 Manufacturing method of down-illuminating lighting source coupled waveguide for use in micro-tip and micro-tip thereby
KR20160075968A Light Converging Photovoltaic Module Utilizing the Reflected Light of Slope
KR101598845B1 manufacturing method of complex pattern with GaN light emitting doide using wet etching and GaN light emitting doide thereby
KR101547535B1 manufacturing method of multi semiconductor epi-layer on SOI(001) substrate
KR101556089B1 manufacturing method of semiconductor epi-layer on SOI(001) substrate
KR101587430B1 manufacturing method of semiconductor epi-layer on Si(001) substrate
KR101556090B1 manufacturing method of multi semiconductor epi-layer on Si(001) substrate
KR20160062795A Quaternary nitride semiconductor power device and manufacturing method thereof
KR20160053463A Wavelength Converting Device and Manufacturing Method Thereof
KR20160053179A APD using modulation doping and composition absorber
KR20160053178A APD using modulation doped absorber
KR101582349B1 Solar cell including extended light absorption area and method thereof
KR20160040380A thin film solar cell for reduction of surface recombination
KR20160024062A manufacturing method for selective uptake of hydrophilic and lipophilic surface for micro-fluidic channel and micro-fluidic channel thereby