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KOJUNDO KAGAKU KENKYUSHO KK

Overview
  • Total Patents
    298
  • GoodIP Patent Rank
    95,576
  • Filing trend
    ⇩ 25.0%
About

KOJUNDO KAGAKU KENKYUSHO KK has a total of 298 patent applications. It decreased the IP activity by 25.0%. Its first patent ever was published in 1979. It filed its patents most often in Japan. Its main competitors in its focus markets surface technology and coating, environmental technology and organic fine chemistry are SIXTRON ADVANCED MATERIALS INC, HEFEI ANDE KEMING SEMICONDUCTOR TECH CO LTD and SUZHOU MAIZHENG TECH CO LTD.

Patent filings in countries

World map showing KOJUNDO KAGAKU KENKYUSHO KKs patent filings in countries
# Country Total Patents
#1 Japan 298

Patent filings per year

Chart showing KOJUNDO KAGAKU KENKYUSHO KKs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Hochido Yuko 168
#2 Futaki Takehiko 80
#3 Kadokura Hidekimi 62
#4 Yokoyama Hidechika 50
#5 Narita Masayoshi 34
#6 Okuhara Yumie 23
#7 Kojima Minoru 19
#8 Chiba Tsutomu 17
#9 Shibayama Takasane 15
#10 Matsumoto Masamichi 14

Latest patents

Publication Filing date Title
JP2020158322A Method for producing magnesium composite oxide
JP2020147822A MANUFACTURING METHOD OF MgO-TiO-BASED SPUTTERING TARGET
JP2020142961A Method for producing tin vanadium dioxide film
JP2020128566A System for solidifying, evaporating and supplying metal halogen compound for thin film deposition
JP2020128565A Evaporation raw material vessel and solid evaporation supply system using the same
JP2020090712A Bis(alkyl tetramethylcyclopentadienyl) zinc, raw material for chemical vapor deposition, and manufacturing method of thin film containing zinc
JP2020059885A Container for evaporation raw material, and manufacturing method of container for evaporation raw material
JP2020002384A Container for evaporation raw material, and manufacturing method thereof
JP2019104962A Tungsten precursor for ald or cvd film deposition
JP2018053371A Sputtering target joint, and film deposition method using the target joint
JP2019056133A Method for depositing atomic layer of metal thin film
JP2018141202A Ceramic sputtering target and manufacturing method of the same
JP2018090855A Raw material for chemical vapor deposition, production method thereof, and production method of oxide film containing indium formed by using raw material for chemical vapor deposition
JP2017052983A Sputtering target
JP2017039965A Sputtering target
JP2017036481A Sputtering target for forming ferroelectric thin film and manufacturing method of the same
JP2015180599A Method of producing white gan powder, and white gan powder
JP2017002355A Sputtering target assembly
JP2015021136A Sputtering target joint body and film deposition method using the same
JP2012219348A Sputtering target