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DNF CO LTD

Overview
  • Total Patents
    142
  • GoodIP Patent Rank
    12,117
  • Filing trend
    ⇧ 214.0%
About

DNF CO LTD has a total of 142 patent applications. It increased the IP activity by 214.0%. Its first patent ever was published in 2006. It filed its patents most often in Republic of Korea, WIPO (World Intellectual Property Organization) and China. Its main competitors in its focus markets organic fine chemistry, surface technology and coating and semiconductors are DUSSARRAT CHRISTIAN, HEFEI ANDE KEMING SEMICONDUCTOR TECH CO LTD and STEIGER JUERGEN.

Patent filings per year

Chart showing DNF CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Kim Myong Woon 107
#2 Lee Sang Ick 97
#3 Jang Se Jin 61
#4 Kim Sung Gi 60
#5 Yang Byeong-Il 43
#6 Seok Jang Hyeon 42
#7 Park Joong Jin 39
#8 Lee Sang-Do 39
#9 Park Jeong Joo 33
#10 Lee Sam Dong 27

Latest patents

Publication Filing date Title
WO2020184910A1 Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method therefor
KR20200107845A A encapsulation layer of silicon-metal oxide containing a metal or a metal oxide in a thin-film and the method thereof
KR20210023086A Novel silylcyclodisilazane compound, method for manufacturing thereof and silicon-containing thin film use the same
KR20190093185A method of manufacturing a cobalt-containing thin film and a cobalt-containing thin film manufactured thereby
KR20200100331A a method for manufacturing conductive thin film
KR20190059250A Composition for silicon-containing thin films and method for producing silicon-containing thin film
KR20200056543A Method of manufacturing a molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby
WO2019088722A1 Method for producing ruthenium-containing thin film, and ruthenium-containing thin film produced thereby
KR20190049587A Method of manufacturing a ruthenium-containing thin film and ruthenium-containing thin film manufactured thereby
WO2018199642A1 Metal triamine compound, method for preparing same, and composition containing same for depositing metal-containing thin film
KR20180120602A Metal triamine compound, its preparation method and composition for depositing a metal-containing thin film comprising the same
WO2018194391A1 Disilylamine compound, method for preparing same and silicon-containing thin film deposition composition comprising same
WO2018194396A1 Silicon-containing thin film deposition composition comprising disilylamine compound and method for preparing silicon-containing thin film by means of same
KR20180118062A Disilyl amine compound, method for preparing the same and composition for depositing silicon-containing thin film containing the same
KR20180118064A composition for depositing silicon-containing thin film containing a disilylamine compound and method for manufacturing a silicon-containing thin film using the same
WO2018182318A1 Composition for depositing silicon-containing thin film and method for manufacturing silicon-containing thin film using the same
WO2018182305A1 Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition
WO2018182309A1 Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the same
KR20180110611A silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition
KR20180110612A Compositions for depositing silicon-containing thin films containing bis(aminosilyl)alkylamine compound and methods for manufacturing silicon-containing thin film using the same