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TRI CHEMICAL LAB INC

Overview
  • Total Patents
    78
  • GoodIP Patent Rank
    212,613
About

TRI CHEMICAL LAB INC has a total of 78 patent applications. Its first patent ever was published in 1994. It filed its patents most often in Japan, Republic of Korea and United States. Its main competitors in its focus markets surface technology and coating, semiconductors and organic fine chemistry are HEFEI ANDE KEMING SEMICONDUCTOR TECH CO LTD, DNF CO LTD and UP CHEMICAL CO LTD.

Patent filings in countries

World map showing TRI CHEMICAL LAB INCs patent filings in countries

Patent filings per year

Chart showing TRI CHEMICAL LAB INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Machida Hideaki 61
#2 Ishikawa Masato 31
#3 Ogura Atsushi 17
#4 Kada Takeshi 17
#5 Oshita Yoshio 14
#6 Ohshita Yoshio 13
#7 Noda Naoto 9
#8 Hoshino Asako 9
#9 Muramoto Ikuyo 8
#10 Enomoto Masayuki 6

Latest patents

Publication Filing date Title
JP2016037654A Film formation material and film formation method
WO2015059972A1 Method for drying inner face of container
JP2012173192A Liquid level detection device and liquid level detection method using the same
JP2012159341A Liquid level sensor
JP2011122244A Conductive barrier film forming material, method for forming conductive barrier film, and method for forming wiring film
JP2011089207A Material for depositing electroconductive barrier film, method for depositing electroconductive barrier film and method for depositing wiring film
JP2008231473A Film forming method and film forming material
JP2007180544A Film-forming material, film-forming method, and device
WO2007066546A1 Hafnium compound, hafnium thin film-forming material and method for forming hafnium thin film
JP2008130575A Film formation material and method
JP2006274447A Copper-tin alloy film forming material and copper-tin alloy film forming method
KR20060082401A Material and method of forming films
JP2007138240A Piping device and fluid feeder
JP2007051042A METHOD FOR PRODUCTION OF HAFNIUM COMPOUND, HAFNIUM COMPOUND WITH IMPURITY Zr OF 50 PPM OR LESS, AND METHOD OF FORMING HAFNIUM-BASED FILM
KR20060059781A Film forming material, film forming method and device
JP2006128611A Film forming material and method, and element
JP2006329734A Interface level sensor and container with same
JP2006306682A MANUFACTURING METHOD OF Ni(PF3)4
JP2006285030A Manufacturing method of waveguide
JP2006249032A NEW COMPOUND, PRODUCTION METHOD FOR THE SAME, Al FILM-FORMING MATERIAL, Al FILM-FORMING METHOD AND Al FILM