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II VI INC

Overview
  • Total Patents
    136
  • GoodIP Patent Rank
    56,426
  • Filing trend
    ⇩ 50.0%
About

II VI INC has a total of 136 patent applications. It decreased the IP activity by 50.0%. Its first patent ever was published in 1977. It filed its patents most often in WIPO (World Intellectual Property Organization), United States and EPO (European Patent Office). Its main competitors in its focus markets surface technology and coating, semiconductors and optics are CAMBRIDGE ADVANCED MATERIALS, TECHNOLOGIES AND DEVICES INTER and CRYSTAL PHOTONICS INC.

Patent filings per year

Chart showing II VI INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Zwieback Ilya 40
#2 Gupta Avinash K 37
#3 Anderson Thomas E 27
#4 Wu Ping 20
#5 Semenas Edward 19
#6 Ruland Gary E 17
#7 Souzis Andrew E 17
#8 Rengarajan Varatharajan 16
#9 Eissler Elgin E 14
#10 Barrett Donovan L 14

Latest patents

Publication Filing date Title
JP2019021909A Compact optical fiber amplifier
CN105308223A Method for synthesizing ultrahigh-purity silicon carbide
US2015311668A1 Method and apparatus for depolarizing light
WO2014081784A1 Heated ribbon erbium doped fiber
US2014234194A1 Vanadium doped SiC single crystals and method thereof
US2013309496A1 Method for synthesizing ultrahigh-purity silicon carbide
US2013320275A1 Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof
EP2852699A1 LARGE DIAMETER, HIGH QUALITY SiC SINGLE CRYSTALS, METHOD AND APPARATUS
US2014118737A1 Multiport tunable optical filters
GB201214830D0 Beam combiner with birefringent and isotropic prisms
WO2011034850A1 Sublimation growth of sic single crystals
EP2478598A1 Optical amplifiers using switched filter devices
EP2411569A1 Sic single crystal sublimation growth method and apparatus
CN102245813A Improved axial gradient transport (AGT) growth process and apparatus utilizing resistive heating
CA2726986A1 Annealing of semi-insulating cdznte crystals
WO2009026269A1 Stabilizing 4h polytype during sublimation growth of sic single crystals
EP2171134A1 Fabrication of sic substrates with low warp and bow
WO2008089181A2 Guided diameter sic sublimation growth with multi-layer growth guide
US2008115719A1 Reduction of carbon inclusions in sublimation grown SiC single crystals
WO2008039914A2 Sic single crystals with reduced dislocation density grown by step-wise periodic perturbation technique