US2016076169A1
|
|
Substrates for growing group iii nitride crystals and their fabrication method
|
WO2015179852A1
|
|
Group iii nitride bulk crystals and their fabrication method
|
US2015337457A1
|
|
Group iii nitride bulk crystals and their fabrication method
|
US2015275391A1
|
|
High pressure reactor for supercritical ammonia
|
EP3094766A1
|
|
Group iii nitride bulk crystals and fabrication method
|
WO2015006712A2
|
|
An electronic device using group iii nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it
|
CN104781057A
|
|
Group III nitride wafer and its production method
|
US2014087113A1
|
|
Method of growing group III nitride crystals
|
CN104781454A
|
|
Group III nitride wafers and fabrication method and testing method
|
KR20150092083A
|
|
A bismuth-doped semi-insulating group iii nitride wafer and its production method
|
CN104781910A
|
|
Composite substrate of gallium nitride and metal oxide
|
WO2013003074A1
|
|
Synthesis method of transition metal nitride and transition metal nitride
|
WO2010060034A1
|
|
METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH
|
EP2281076A1
|
|
Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth
|
TW200942655A
|
|
Method for producing group iii nitride wafers and group iii nitride wafers
|