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IFERRO CO LTD

Overview
  • Total Patents
    16
About

IFERRO CO LTD has a total of 16 patent applications. Its first patent ever was published in 2006. It filed its patents most often in Republic of Korea and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, computer technology and micro-structure and nano-technology are Longitude Flash Memory Solutions Ltd, LOJEK BOHUMIL and YANGTZE RIVER ADVANCED STORAGE IND INNOVATION CENTER CO LTD.

Patent filings in countries

World map showing IFERRO CO LTDs patent filings in countries
# Country Total Patents
#1 Republic of Korea 10
#2 WIPO (World Intellectual Property Organization) 6

Patent filings per year

Chart showing IFERRO CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Park Byung Eun 9
#2 Park Byung-Eun 6
#3 Lee Jong Sik 1

Latest patents

Publication Filing date Title
KR20080108960A Ferroelectric material and method of forming ferroelectric layer using the same
KR20090110027A Vending machine with display stand
WO2008082046A1 Ferroelectric memory device, fet, and methods of manufacturing the same
WO2008082045A1 Memory device and method of manufacturing the same
WO2008072827A1 Ferroelectric material and method of forming ferroelectric layer using the same
WO2008082047A1 Fet, ferroelectric memory device, and methods of manufacturing the same
KR20080056078A Ferroelectric material and method of forming ferroelectric layer using the same
KR20080063033A Fet, ferroelectric memory device, and methods of manufacturing the same
WO2008082044A1 Fet, ferroelectric memory device, and methods of manufacturing the same
WO2008072826A1 Mfms-fet and mfms-ferroelectric memory device
KR20080063032A Ferroelectric memory device, fet, and methods of manufacturing the same
KR20080063031A Memory device and method of manufacturing the same
KR20080055589A Mfms fet and ferroelectric memory device
KR20080063030A Fet, ferroelectric memory device, and methods of manufacturing the same
KR20080046419A Memory device
KR20080046417A Ferroelectric memory device and manufacturing method thereof