| # | Country | Total Patents | |
|---|---|---|---|
| #1 | United States | 38 | |
| #2 | Taiwan | 10 | |
| #3 | Republic of Korea | 8 | |
| #4 | EPO (European Patent Office) | 4 | |
| #5 | China | 3 | |
| #6 | Japan | 2 |
| # | Technology | |
|---|---|---|
| #1 | Semiconductor devices | |
| #2 | Static stores | |
| #3 | Nanostructure applications | |
| #4 | Coating metallic material | |
| #5 | Pulse technique |
| # | Name | Total Patents |
|---|---|---|
| #1 | Ramkumar Krishnaswamy | 48 |
| #2 | Levy Sagy | 14 |
| #3 | Jenne Fredrick | 13 |
| #4 | Prabhakar Venkatraman | 12 |
| #5 | Levy Sagy Charel | 11 |
| #6 | Keshavarzi Ali | 7 |
| #7 | Polishchuk Igor | 7 |
| #8 | Geha Sam | 7 |
| #9 | Byun Jeong Soo | 6 |
| #10 | Raghavan Vijay | 6 |
| Publication | Filing date | Title |
|---|---|---|
| US2019319104A1 | Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region | |
| US2019147960A1 | Bias scheme for word programming in non-volatile memory and inhibit disturb reduction | |
| US2016308033A1 | Oxide-nitride-oxide stack having multiple oxynitride layers | |
| TW201349463A | Nonvolatile charge trap memory device having a high dielectric constant blocking region | |
| KR20200024952A | Oxide-nitride-oxide stack having multiple oxynitride layers |