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YANGTZE RIVER ADVANCED STORAGE IND INNOVATION CENTER CO LTD

Overview
  • Total Patents
    21
  • GoodIP Patent Rank
    79,027
About

YANGTZE RIVER ADVANCED STORAGE IND INNOVATION CENTER CO LTD has a total of 21 patent applications. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, computer technology and micro-structure and nano-technology are SEKAR DEEPAK C, HONG CHEONG MIN and PARK JINTAEK.

Patent filings in countries

World map showing YANGTZE RIVER ADVANCED STORAGE IND INNOVATION CENTER CO LTDs patent filings in countries
# Country Total Patents
#1 China 21

Top inventors

# Name Total Patents
#1 Liu Jun 21

Latest patents

Publication Filing date Title
CN112186102A Semiconductor device and forming method thereof
CN112133827A Three-dimensional memory and forming method thereof
CN112103390A Semiconductor device and forming method thereof
CN112103306A Three-dimensional phase change memory and control method thereof
CN112103292A Memory and manufacturing method thereof
CN112018239A Phase change memory and manufacturing method thereof
CN111933656A Three-dimensional phase change memory and preparation method thereof
CN112018238A Method for manufacturing three-dimensional memory
CN111933797A Three-dimensional memory
CN112164748A Phase change memory and manufacturing method thereof
CN111969110A Memory and preparation method thereof
CN112166471A Novel distributed array and contact architecture for 4-stack 3D X-point memory
CN111816766A Phase change memory and manufacturing method thereof
CN111739904A Preparation method of three-dimensional phase change memory and three-dimensional phase change memory
CN112106201A Novel integration scheme for forming vertical 3D X-POINT memory at lower cost
CN112106137A Novel array and contact architecture for 4-stack 3D cross-point memory
CN112106202A New cell stack layer with reduced WL and BL resistance for 3D X-Point memory to improve programming and increase array size
CN112106136A New replacement bit line and word line scheme for 3D phase change memory cells to improve programming and increase array size
CN112074907A Novel programming and read biasing schemes for distributed array and CMOS architecture for 4-stacked 3D PCM memory
CN112041997A New cell structure with reduced programming current and thermal cross-talk for 3D X-Point memory