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SIXPOINT MAT INC

Overview
  • Total Patents
    59
  • GoodIP Patent Rank
    29,127
  • Filing trend
    ⇩ 85.0%
About

SIXPOINT MAT INC has a total of 59 patent applications. It decreased the IP activity by 85.0%. Its first patent ever was published in 2009. It filed its patents most often in United States, EPO (European Patent Office) and Japan. Its main competitors in its focus markets surface technology and coating, semiconductors and materials and metallurgy are NORSTEL AB, BEIJING TONGMEI XTAL TECHNOLOGY CO LTD and TIVRA CORP.

Patent filings per year

Chart showing SIXPOINT MAT INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Hashimoto Tadao 59
#2 Letts Edward 29
#3 Key Daryl 9
#4 Ikari Masanori 7
#5 Hoff Sierra 5
#6 Ueda Daisuke 5
#7 Sierra Hoff 3

Latest patents

Publication Filing date Title
WO2019157313A1 Low-dislocation bulk gan crystal and method of fabricating same
US2018182882A1 Electronic device using group III nitride semiconductor and its fabrication method
WO2019066787A1 Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method
US2019093256A1 Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method
US2019091807A1 Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method
US10242868B1 Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method
US2019096667A1 Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method
WO2016210428A1 High pressure reactor and method of growing group iii nitride crystals in supercritical ammonia
US2016376726A1 High pressure reactor and method of growing group III nitride crystals in supercritical ammonia
US2016215410A1 Seed selection and growth methods for reduced-crack group III nitride bulk crystals
CN107208305A The kind crystalline substance selection of the group III-nitride bulk crystals of crack reduction and growing method
US2016163801A1 Group III nitride substrates and their fabrication method
CN107002275A Group III-nitride substrate and its manufacture method
US2016153115A1 Method of fabricating bulk group III nitride crystals in supercritical ammonia
CN107002278A III-th family nitride crystal, its manufacture method and the method that block III-th family nitride crystal is manufactured in overcritical ammonia
CN107075719A Substrate and its manufacture method for growing III-th family nitride crystal
EP3126548A1 High pressure reactor for supercritical ammonia and method for producing crystalline group iii nitride
US2015203991A1 Group III nitride bulk crystals and fabrication method
US2015014817A1 Electronic device and epitaxial multilayer wafer of group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness
US2014087209A1 Method of growing group III nitride crystals