| # | Country | Total Patents | |
|---|---|---|---|
| #1 | EPO (European Patent Office) | 5 | |
| #2 | United States | 5 | |
| #3 | Japan | 4 |
| # | Industry | |
|---|---|---|
| #1 | Surface technology and coating | |
| #2 | Machines | |
| #3 | Semiconductors |
| # | Technology | |
|---|---|---|
| #1 | Single-crystal-growth | |
| #2 | Semiconductor devices | |
| #3 | Unspecified technologies | |
| #4 | Unspecified technologies |
| # | Name | Total Patents |
|---|---|---|
| #1 | Ellison Alexandre | 10 |
| #2 | Janzen Erik | 7 |
| #3 | Hallin Christer | 5 |
| #4 | Magnusson Bjoern | 4 |
| #5 | Vehanen Asko | 4 |
| #6 | Bergman Peder | 3 |
| #7 | Magnusson Björn | 2 |
| #8 | Bjorn Magnusson | 2 |
| #9 | Ethan James Westcot | 2 |
| #10 | Kordina Olle | 2 |
| Publication | Filing date | Title |
|---|---|---|
| EP1619276A2 | Homoepitaxial growth of SiC on low off-axis SiC wafers | |
| EP1471168A1 | Device and method for producing single crystals by vapour deposition | |
| US2006137600A1 | Lightly doped silicon carbide wafer and use thereof in high power devices |