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AXT INC

Overview
  • Total Patents
    74
  • GoodIP Patent Rank
    195,941
About

AXT INC has a total of 74 patent applications. Its first patent ever was published in 2000. It filed its patents most often in China, United States and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets surface technology and coating, semiconductors and machines are AMMONO SPÓŁKA Z OGRANICZONĄ ODPOWIEDZIALNOŚCIĄ, APOLLO DIAMOND INC and BONDOKOV ROBERT T.

Patent filings per year

Chart showing AXT INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Liu Weiguo 25
#2 Liu Xiao Gordon 17
#3 Young Morris 13
#4 Liu Wei Guo 8
#5 Liu Heng 8
#6 Young Morris S 7
#7 Badawi M Hani 6
#8 Chen John 5
#9 Leung Charles 5
#10 Shih Robert 5

Latest patents

Publication Filing date Title
US2020190697A1 Low Etch Pit Density Gallium Arsenide Crystals With Boron Dopant
US2020190696A1 Low etch pit density 6 inch semi-insulating gallium arsenide wafers
US2011293890A1 Low etch pit density (EPD) semi-insulating III-V wafers
TW201224228A Germanium ingots/wafers having low micro-pit density (mpd) as well as systems and methods for manufacturing same
WO2010053586A2 Systems, methods and substrates of monocrystalline germanium crystal growth
TW201109483A Systems, methods and substrates of monocrystalline germanium crystal growth
WO2011043777A1 Crystal growth apparatus and method
CN101781526A Chemical polishing solution used for GaAs chip and chemical polishing method
CN101775257A Rough polishing solution and rough polishing method used for GaAs wafer
CN101735904A Cleaning solution and cleaning method adopting same
CN101736401A Method and device for growing germanium crystal
CN101555620A Crystal growing device and method
CN101486278A Laser adjustable deepness marking system and method
US2008280427A1 Low etch pit density (EPD) semi-insulating GaAs wafers
CN1765006A Apparatus and method for reducing impurities in a semiconductor material
EP1616343A2 Apparatus and method for balanced pressure growth of group iii-v monocrystalline semiconductor compounds
CN102220628A Device for growing semiconductor crystals
US6650018B1 High power, high luminous flux light emitting diode and method of making same
US2003172870A1 Apparatus for growing monocrystalline group II-VI and III-V compounds
CN1516901A Improved light emitting diode