Process for obtaining bulk monocrystalline gallium-containing nitride
PL376672A1
Nitride semiconductor laser device and a method for improving its performance
PL357696A1
Method of producing substrate standardized with epitaxial layer (template type substrates) from voluminal mono-crystalline nitride containing gallium with surface of high structural quality
PL357706A1
Method of production of voluminal mono-crystalline nitride containing gallium
PL357707A1
Method of fabrication of eptaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline nitride containing gallium with surface suitable for epitaxy featuring required electric properties
PL375597A1
Light emitting element structure having nitride bulk single crystal layer
PL357700A1
Method of obtaining voluminal mono-crystalline nitride containing gallium
PL357709A1
Method of fabrication of epitaxial layer standardized complex substrate (template type substrates) from voluminal mono-crystalline nitride containing gallium featuring increased heat resistance
