EPIGAN NV has a total of 44 patent applications. It increased the IP activity by 650.0%. Its first patent ever was published in 2011. It filed its patents most often in EPO (European Patent Office), China and Republic of Korea. Its main competitors in its focus markets semiconductors, measurement and surface technology and coating are TEKUNISUKO KK, GUANGZHOU CANSEMI TECH CO LTD and EPIPLUS CO LTD.
# | Country | Total Patents | |
---|---|---|---|
#1 | EPO (European Patent Office) | 12 | |
#2 | China | 7 | |
#3 | Republic of Korea | 7 | |
#4 | WIPO (World Intellectual Property Organization) | 7 | |
#5 | United States | 6 | |
#6 | United Kingdom | 4 | |
#7 | Taiwan | 1 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Measurement | |
#3 | Surface technology and coating |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Single-crystal-growth | |
#3 | Measuring length, angles and areas | |
#4 | Analysing materials | |
#5 | Coating metallic material |
# | Name | Total Patents |
---|---|---|
#1 | Derluyn Joff | 40 |
#2 | Degroote Stefan | 35 |
#3 | Germain Marianne | 15 |
#4 | Püsche Roland | 6 |
#5 | Pusche Roland | 4 |
#6 | Puesche Roland | 2 |
#7 | Marianne Germain | 1 |
Publication | Filing date | Title |
---|---|---|
CN110754002A | High electron mobility transistor | |
EP3503163A1 | A method for forming a silicon carbide film onto a silicon substrate | |
EP3502615A1 | A wafer surface curvature determining system | |
EP2983195A1 | Semiconductor structure comprising an active semiconductor layer of the iii-v type on a buffer layer stack and method for producing semiconductor structure | |
GB201203161D0 | A device comprising a III-N layer stack with improved passivation layer and associated manufacturing method | |
GB201202758D0 | Method for terminating sliplines in structures comprising III-v epitaxial layers | |
GB201112330D0 | Method for growing III-V epitaxial layers and semiconductor structure | |
GB201112327D0 | Method for growing III-V epitaxial layers |