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ENRAY PHOTOELECTRIC TECHNOLOGY SHANGHAI CO LTD

Overview
  • Total Patents
    43
About

ENRAY PHOTOELECTRIC TECHNOLOGY SHANGHAI CO LTD has a total of 43 patent applications. Its first patent ever was published in 2010. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, materials and metallurgy and electrical machinery and energy are XIAO DEYUAN, NIPPON MICROMETAL CORP and UNO TOMOHIRO.

Patent filings in countries

World map showing ENRAY PHOTOELECTRIC TECHNOLOGY SHANGHAI CO LTDs patent filings in countries
# Country Total Patents
#1 China 43

Patent filings per year

Chart showing ENRAY PHOTOELECTRIC TECHNOLOGY SHANGHAI CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Rujing Zhang 26
#2 Deyuan Xiao 25
#3 Mengzhao Cheng 12
#4 Qing Rao 8
#5 Zhang Rujing 8
#6 Xiao Deyuan 7
#7 Hongbo Yu 6
#8 Miao Li 5
#9 Yu Hongbo 2
#10 Ouyang Xiong 1

Latest patents

Publication Filing date Title
CN102368516A High-voltage LED device and manufacturing method thereof
CN102339913A High-voltage LED (Light Emitting Diode) device and manufacturing method thereof
CN102315240A High-voltage nitride LED (Light-Emitting Diode) circuit and corresponding high-voltage nitride LED device
CN102222745A LED (Light Emitting Diode) and manufacturing method thereof
CN102244169A Light-emitting diode and manufacturing method thereof
CN102255009A Light-emitting diode (LED) chip manufacturing method
CN102201527A LED package structure and fabrication method thereof
CN102214652A LED (light emitting diode) packaging structure and preparation method thereof
CN102157646A Nitride LED structure and preparation method thereof
CN102208507A Light-emitting diode (LED) and manufacturing method thereof
CN102201505A Nitride LED (Light Emitting Diode) structure and preparation method thereof
CN102157647A Nitride LED structure and preparation method thereof
CN102185055A Light-emitting diode and manufacturing method thereof
CN102185063A Light-emitting diode and manufacturing method thereof
CN102185060A Nitride light emitting diode (LED) structure and preparation method thereof
CN102185058A Nitride light-emitting diode (LED) structure and preparation method thereof
CN102185053A Light-emitting diode and manufacturing method thereof
CN102185054A Light-emitting diode (LED) and manufacturing method thereof
CN102163662A Light emitting diode (LED) and manufacturing method thereof
CN102127757A Metal organic chemical vapor deposition (MOCVD) reaction system