EL MOS ELEKTRONIK IN MOS TECHN has a total of 13 patent applications. Its first patent ever was published in 1990. It filed its patents most often in Germany, WIPO (World Intellectual Property Organization) and EPO (European Patent Office). Its main competitors in its focus markets semiconductors, measurement and electrical machinery and energy are TRANSISTOR AG, UEHLING TRENT S and TECH GMBH ANTRIEBSTECHNIK UND.
# | Country | Total Patents | |
---|---|---|---|
#1 | Germany | 8 | |
#2 | WIPO (World Intellectual Property Organization) | 3 | |
#3 | EPO (European Patent Office) | 1 | |
#4 | United States | 1 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Measurement | |
#3 | Electrical machinery and energy |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Measuring electric variables | |
#3 | Electric motor controls | |
#4 | Special measuring | |
#5 | Dynamo-electric machines |
# | Name | Total Patents |
---|---|---|
#1 | Roth Walter | 4 |
#2 | Giebel Thomas Dr Ing | 2 |
#3 | Giebel Thomas | 2 |
#4 | Muesch Erhard Dipl Ing | 2 |
#5 | Roth Walter Prof Dr | 2 |
#6 | Weyer Klaus | 1 |
#7 | Rost Wolfgang Dipl Ing | 1 |
#8 | Giebel Thomas Dr | 1 |
Publication | Filing date | Title |
---|---|---|
DE19824417A1 | Schottky diode for integrated circuit | |
DE19536753C1 | MOS transistor with high output withstand voltage | |
DE19511307C1 | Extreme value evaluation system for DC motor armature current signal. | |
DE4322549A1 | MOS transistor with high output withstand voltage | |
WO9315413A1 | Process and device for offset-compensated magnetic field measurement by means of a hall element | |
DE4302342A1 | Offset compensated measurement of magnetic field with Hall element - involves chip-internal electronic compensation with two measurement phases between which measurement and supply connections are interchanged | |
DE4217265A1 | Method for determining relevant relative extreme values of a signal subject to interference | |
DE4212876A1 | Integrated circuit with a high-voltage-resistant input stage having a MOS input transistor | |
DE4020076A1 | METHOD FOR PRODUCING A PMOS TRANSISTOR AND PMOS TRANSISTOR |