Learn more

DEMETRON

Overview
  • Total Patents
    36
About

DEMETRON has a total of 36 patent applications. Its first patent ever was published in 1973. It filed its patents most often in Germany, EPO (European Patent Office) and United States. Its main competitors in its focus markets materials and metallurgy, semiconductors and machine tools are HERAEUS DEUTSCHLAND GMBH, HERAEUS MATERIALS TECH GMBH and F&K DELVOTEC BONDTECHNIK GMBH.

Patent filings in countries

World map showing DEMETRONs patent filings in countries

Patent filings per year

Chart showing DEMETRONs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Langer Adolf 6
#2 Ptaschek Georg 3
#3 Golla Manfred 3
#4 Weise Wolfgang Dr 2
#5 Dietrich Horst 2
#6 Kaufmann Dieter 2
#7 Lutz Klaus Dipl Chem Dr 2
#8 Schlamp Guenther Dipl Chem Dr 2
#9 Gall Klaus-P 2
#10 Boehm Wolfgang Dr 2

Latest patents

Publication Filing date Title
DE4128804A1 Lead-free low melting glass - contains silver oxide, vanadium oxide and tellurium oxide, used as soldering paste for electrical components
GB9003491D0 A soldering paste for fixing semiconductors to ceramic supports
DE3730764C1 Use of tin and / or lead alloys as soft solders to apply semiconductors to metallic substrates
DE3716852C1 Sputtering target for the production of optically transparent layers and method for producing these targets
DE3632413A1 METHOD FOR THE PRODUCTION OF FLINKING MELTFUSE
DE3631830A1 MULTI-MATERIAL ALLOY FOR TARGETS OF CATHODE SPRAYING SYSTEMS AND THEIR USE
EP0215462A2 Paste for bonding semi-conductors to ceramic underlayers
DE3627775A1 METHOD FOR PRODUCING TARGETS
DE3230376A1 GOLD WIRE FOR SEMICONDUCTOR COMPONENTS
DE2923174A1 SPUTTER TARGET ON CARRIER PLATE
US4236948A Process for doping semiconductor crystals
DE2853951A1 Contact plate for semiconductor devices or chips - uses porous copper or silver plate covered on both sides with non-porous metal layers
DE2810378A1 Doping semiconductor crystal, esp. silicon crystals - using soln. contg. alkyl and/or aryl poly-silicate(s), plus dopant, and forming silica layer on the crystal
DE2704405A1 Base plate for semiconductor elements - consists of an alloy contg. palladium, tungsten or molybdenum
DE2625092A1 Contact sheet for semiconductor devices - comprising sandwich of metal of specified conductivity with softer outer layers
DE2501528A1 Soldered parts of nonmagnetic material - with marked solder layer, for production of SC components have layers of different composition on each side
GB1420549A Process for the production of gold powder