|
US8492185B1
|
|
Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
|
|
US2012199952A1
|
|
Method for growth of indium-containing nitride films
|
|
US2012000415A1
|
|
Large Area Nitride Crystal and Method for Making It
|
|
US2011220912A1
|
|
Semi-insulating group III metal nitride and method of manufacture
|
|
US2011183498A1
|
|
High pressure apparatus and method for nitride crystal growth
|
|
US2012187412A1
|
|
Gallium-nitride-on-handle substrate materials and devices and method of manufacture
|
|
US2011256693A1
|
|
Method for synthesis of high quality large area bulk gallium based crystals
|
|
US2012137966A1
|
|
High pressure apparatus with stackable rings
|
|
US8299473B1
|
|
Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
|
|
US2010151194A1
|
|
Polycrystalline group III metal nitride with getter and method of making
|
|
US8455894B1
|
|
Photonic-crystal light emitting diode and method of manufacture
|
|
US2010219505A1
|
|
Nitride crystal with removable surface layer and methods of manufacture
|
|
US2010031874A1
|
|
Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer
|
|
US2010031875A1
|
|
Process for large-scale ammonothermal manufacturing of gallium nitride boules
|
|
US2010031872A1
|
|
Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
|
|
US2009320744A1
|
|
High pressure apparatus and method for nitride crystal growth
|
|
US2009301387A1
|
|
High pressure apparatus and method for nitride crystal growth
|
