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BRIERE MICHAEL A

Overview
  • Total Patents
    41
About

BRIERE MICHAEL A has a total of 41 patent applications. Its first patent ever was published in 2006. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors, electrical machinery and energy and basic communication technologies are VELOX SEMICONDUCTOR CORP, SUZHOU JIEXINWEI SEMICONDUCTOR TECH CO LTD and TRANSPHORM INC.

Patent filings in countries

World map showing BRIERE MICHAEL As patent filings in countries
# Country Total Patents
#1 United States 41

Patent filings per year

Chart showing BRIERE MICHAEL As patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Briere Michael A 41
#2 Zhang Jason 4
#3 Thapar Naresh 2
#4 Bahramian Hamidtony 2
#5 Cheah Chuan 1
#6 Cao Jianjun 1
#7 Bahramian Hamid Tony 1
#8 Hu Kunzhong 1
#9 Bridger Paul 1
#10 Yang Bo 1

Latest patents

Publication Filing date Title
US2013069208A1 Group III-V device structure having a selectively reduced impurity concentration
US2013015499A1 Composite semiconductor device with a SOI substrate having an integrated diode
US2013015498A1 Composite semiconductor device with integrated diode
US2013015905A1 Nested composite switch
US8729561B1 P type III-nitride materials and formation thereof
US2012274366A1 Integrated Power Stage
US2012241820A1 III-Nitride Transistor with Passive Oscillation Prevention
US2012223365A1 III-Nitride semiconductor structures with strain absorbing interlayer transition modules
US2012217506A1 III-nitride heterojunction devices having a multilayer spacer
US2012235209A1 High voltage rectifier and switching circuits
US2011227090A1 Programmable III-nitride transistor with aluminum-doped gate
US2011210338A1 Efficient high voltage switching circuits and monolithic integration of same
US2011121313A1 Enhancement mode III-nitride transistors with single gate Dielectric structure
US2011210337A1 Monolithic integration of silicon and group III-V devices
US2011080156A1 DC/DC converter with depletion-mode III-nitride switches
US2010171126A1 In situ dopant implantation and growth of a III-nitride semiconductor body
US2011140176A1 Monolithic integrated composite group III-V and group IV semiconductor device and method for fabricating same
US2011140169A1 Highly conductive source/drain contacts in III-nitride transistors
US2010065856A1 Semiconductor package with integrated passives and method for fabricating same
US2009194793A1 III-nitride wafer and devices formed in a III-nitride wafer