VELOX SEMICONDUCTOR CORP has a total of 37 patent applications. Its first patent ever was published in 2004. It filed its patents most often in EPO (European Patent Office), United States and China. Its main competitors in its focus markets semiconductors, basic communication technologies and electrical machinery and energy are FAIRCHILD SEMICONDUCTOR, BRIERE MICHAEL A and ISAHAYA ELECTRONICS CORP.
# | Country | Total Patents | |
---|---|---|---|
#1 | EPO (European Patent Office) | 9 | |
#2 | United States | 8 | |
#3 | China | 5 | |
#4 | Japan | 5 | |
#5 | Republic of Korea | 3 | |
#6 | WIPO (World Intellectual Property Organization) | 3 | |
#7 | Hong Kong | 2 | |
#8 | Taiwan | 2 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Basic communication technologies | |
#3 | Electrical machinery and energy | |
#4 | Environmental technology |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Climate change mitigation in buildings | |
#3 | Pulse technique | |
#4 | AC and DC conversion devices | |
#5 | Amplifiers |
# | Name | Total Patents |
---|---|---|
#1 | Murphy Michael | 23 |
#2 | Shelton Bryan S | 19 |
#3 | Pophristic Milan | 19 |
#4 | Liu Linlin | 12 |
#5 | Peres Boris | 8 |
#6 | Gottfried Mark | 7 |
#7 | Ceruzzi Alex D | 7 |
#8 | Stall Richard A | 7 |
#9 | Zhu Tinggang | 6 |
#10 | Zhu Ting Gang | 6 |
Publication | Filing date | Title |
---|---|---|
US2009321787A1 | High voltage GaN-based heterojunction transistor structure and method of forming same | |
US2008230784A1 | Cascode circuit employing a depletion-mode, GaN-based FET | |
US2007108547A1 | Second Schottky contact metal layer to improve GaN Schottky diode performance | |
TW200636957A | Package for gallium nitride semiconductor devices | |
US2006145283A1 | Gallium nitride semiconductor device | |
US2006145674A1 | GaN semiconductor based voltage conversion device | |
US7229866B2 | Non-activated guard ring for semiconductor devices | |
US2005179104A1 | Lateral conduction Schottky diode with plural mesas | |
US2005179107A1 | Low doped layer for nitride-based semiconductor device |