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TRANSPHORM INC

Overview
  • Total Patents
    219
  • GoodIP Patent Rank
    14,746
  • Filing trend
    ⇩ 72.0%
About

TRANSPHORM INC has a total of 219 patent applications. It decreased the IP activity by 72.0%. Its first patent ever was published in 2007. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and China. Its main competitors in its focus markets semiconductors, basic communication technologies and electrical machinery and energy are QSPEED SEMICONDUCTOR INC, SOENO AKITAKA and SUZHOU JIEXINWEI SEMICONDUCTOR TECH CO LTD.

Patent filings per year

Chart showing TRANSPHORM INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Wu Yifeng 96
#2 Mishra Umesh 85
#3 Lal Rakesh K 40
#4 Parikh Primit 37
#5 Honea James 35
#6 Chowdhury Srabanti 30
#7 Coffie Robert 29
#8 Fichtenbaum Nicholas 29
#9 Ben-Yaacov Ilan 28
#10 Chu Rongming 24

Latest patents

Publication Filing date Title
WO2020077243A1 Lateral iii-nitride devices including a vertical gate module
US10630285B1 Switching circuits having drain connected ferrite beads
US2018301386A1 Conditions for burn-in of high power semiconductors
TW201806165A III-Nitride devices including a graded depleting layer
WO2017123999A1 Enhancement mode iii-nitride devices having an al(1-x)sixo gate insulator
US2018083617A1 Paralleling of switching devices for high power circuits
US2016172480A1 Gate structures for III-N devices
US9590494B1 Bridgeless power factor correction circuits
US2016172455A1 Recessed ohmic contacts in a III-N device
US2016020313A1 Forming enhancement mode III-nitride devices
US2015054117A1 Semiconductor devices with guard rings
WO2015009514A1 Iii-nitride transistor including a p-type depleting layer
US2016006428A1 Switching circuits having ferrite beads
US2015016169A1 Multilevel inverters and their components
US2014273422A1 Method for making semiconductor diodes with low reverse bias currents
US2014292395A1 Gate drivers for circuits based on semiconductor devices
US2014264370A1 Carbon doping semiconductor devices
US2014231823A1 Electrodes for semiconductor devices and methods of forming the same
WO2014004885A1 Semiconductor devices with integrated hole collectors
US2013264578A1 N-polar III-nitride transistors