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Diode structures with controlled injection efficiency for fast switching
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TVS structures for high surge and low capacitance
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Lateral super junctions with high substrate breakdown and build in avalanche clamp diode
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Buried field ring field effect transistor (buf-fet) integrated with cells implanted with hole supply path
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Sawtooth electric field drift region structure for power semiconductor devices
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Bottom source NMOS triggered Zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS)
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Latch-up free vertical TVS diode array structure using trench isolation
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Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS)
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Symmetric blocking transient voltage suppressor (TVS) using bipolar NPN and PNP transistor base snatch
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Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode
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High frequency switching mosfets with low output capacitance using a depletable p-shield
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TVS with low capacitance and forward voltage drop with depleted SCR as steering diode
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High voltage MOSFET diode reverse recovery by minimizing P-body charges
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Method of forming a hybrid split gate simiconductor
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Hybrid split gate semiconductor
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Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path
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Edge termination configurations for high voltage semiconductor power devices
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Configuration and method to generate saddle junction electric field in edge termination
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Diode structures with controlled injection efficiency for fast switching
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Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances
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