|
US2014034905A1
|
|
Epitaxially Thickened Doped or Undoped Core Nanowire FET Structure and Method for Increasing Effective Device Width
|
|
US2014021538A1
|
|
Replacement gate fin first wire last gate all around devices
|
|
US2013292701A1
|
|
Doped core trigate FET structure and method
|
|
US2013175502A1
|
|
Nanowire field effect transistors
|
|
US2013175597A1
|
|
Nanowire floating gate transistor
|
|
US2013112937A1
|
|
Nanowire field effect transistor device
|
|
US2013105897A1
|
|
Nanowire FET and finFET hybrid technology
|
|
US2013026449A1
|
|
Hybrid CMOS technology with nanowire devices and double gated planar devices
|
|
US2012068150A1
|
|
Nanowire field effect transistors
|
|
US2012037880A1
|
|
Methods of forming contacts for nanowire field effect transistors
|
|
US2012007051A1
|
|
Process for forming a surrounding gate for a nanowire using a sacrificial patternable dielectric
|
|
US2011315953A1
|
|
Method of forming compound semiconductor
|
|
US2011278544A1
|
|
Generation of multiple diameter nanowire field effect transistors
|
|
US2011278543A1
|
|
Generation of multiple diameter nanowire field effect transistors
|
|
US2011278546A1
|
|
Nanowire tunnel field effect transistors
|
|
US2011278539A1
|
|
Generation of multiple diameter nanowire field effect transistors
|
|
US2011249489A1
|
|
Nanowire circuits in matched devices
|
|
US2011168982A1
|
|
Nanowire pin tunnel field effect devices
|
|
US2011169051A1
|
|
Structure for use in fabrication of PiN heterojunction TFET
|
|
US2011133166A1
|
|
Nanowire FET having induced radial strain
|
