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ASM JAPAN

Overview
  • Total Patents
    352
  • GoodIP Patent Rank
    206,936
  • Filing trend
    ⇩ 100.0%
About

ASM JAPAN has a total of 352 patent applications. It decreased the IP activity by 100.0%. Its first patent ever was published in 1990. It filed its patents most often in United States, Republic of Korea and EPO (European Patent Office). Its main competitors in its focus markets surface technology and coating, semiconductors and machines are ASM JAPAN KK, KOKUSAI ELECTRIC CORP and KOOKJE ELECTRIC KOREA CO LTD.

Patent filings per year

Chart showing ASM JAPANs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Matsuki Nobuo 54
#2 Shimizu Akira 42
#3 Fukazawa Atsuki 40
#4 Fukuda Hideaki 39
#5 Yamagishi Takayuki 31
#6 Satoh Kiyoshi 29
#7 Morisada Yoshinori 26
#8 Tsuji Naoto 24
#9 Takizawa Masahiro 21
#10 Matsushita Kiyohiro 19

Latest patents

Publication Filing date Title
KR20130035880A Method for forming a single-phase multi-element film by peald
KR20130007431A Dual section module having shared and unshared mass flow controllers, wafer processing appratus comprising that and method for processing wafer using that
KR20130000333A Method for positioning wafers in dual wafer transport, dual wafer-processing unit and wafer-processing apparatus
KR20120135471A Wafer-processing apparatus
KR20120100773A Calibration method of uv sensor for uv curing
KR20120075397A Method of forming metal oxide hardmask
TW201220398A Method of forming conformal film having si-n bonds on high-aspect ratio pattern
US2013014697A1 Container Having Multiple Compartments Containing Liquid Material for Multiple Wafer-Processing Chambers
US2011159202A1 Method for Sealing Pores at Surface of Dielectric Layer by UV Light-Assisted CVD
KR20110025086A Method of forming conformal dielectric film having si-n bonds by pecvd
US2010221925A1 Method of forming conformal dielectric film having Si-N bonds by PECVD
US7825040B1 Method for depositing flowable material using alkoxysilane or aminosilane precursor
US2010291713A1 Method of forming highly conformal amorphous carbon layer
US2010189923A1 Method of forming hardmask by plasma cvd
US2010184302A1 Method of forming conformal dielectric film having Si-N bonds by PECVD
US2010147396A1 Multiple-Substrate Transfer Apparatus and Multiple-Substrate Processing Apparatus
US2010151151A1 Method of forming low-k film having chemical resistance
US2010136313A1 Process for forming high resistivity thin metallic film
US2010101491A1 Wafer lift pins suspended and supported at underside of susceptor
US2010104770A1 Two-step formation of hydrocarbon-based polymer film