Normal pulse profile modification in a film deposition process
US2021125853A1
Susceptor for semiconductor substrate processing
US2021118668A1
Semiconductor deposition reactor manifolds
US2021125832A1
Methods for filling a gap feature on a substrate surface and related semiconductor structures
US2021118671A1
Atomic layer deposition of indium germanium zinc oxide
US2021118672A1
Atomic layer deposition of indium gallium zinc oxide
US2021125827A1
Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US2021118687A1
Apparatus and methods for selectively etching films
US2021118667A1
Method of topology-selective film formation of silicon oxide
US2021111025A1
Method of forming a photoresist underlayer and structure including same
US2021118679A1
Methods for selective deposition of doped semiconductor material
US2021111053A1
Vertical batch furnace assembly
US2021102290A1
Gas injection system and reactor system including same
US2021102292A1
Reactor system including a gas distribution assembly for use with activated species and method of using same
US2021102289A1
Substrate processing device having connection plates, substrate processing method
US2021104399A1
Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US2021090878A1
Substrate processing method
US2021082692A1
Method of forming a carbon-containing layer and structure including the layer
US2021087679A1
Semiconductor processing device
US2021079527A1
Heating zone separation for reactant evaporation system
