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AIXTRON AG

Overview
  • Total Patents
    462
About

AIXTRON AG has a total of 462 patent applications. Its first patent ever was published in 1994. It filed its patents most often in Germany, WIPO (World Intellectual Property Organization) and Taiwan. Its main competitors in its focus markets surface technology and coating, semiconductors and machines are SYSNEX CO LTD, RIBER and BLOMILEY ERIC R.

Patent filings per year

Chart showing AIXTRON AGs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Kaeppeler Johannes 144
#2 Strauch Gerd 103
#3 Juergensen Holger 85
#4 Franken Walter 61
#5 Strauch Gerhard Karl 60
#6 Dauelsberg Martin 42
#7 Baumann Peter 41
#8 Schumacher Marcus 38
#9 Lindner Johannes 35
#10 Heuken Michael 32

Latest patents

Publication Filing date Title
US2011070370A1 Thermal gradient enhanced chemical vapour deposition (tge-cvd)
DE102010017082A1 Device and method for loading and unloading, in particular a coating device
DE102010016792A1 Storage magazine of a CVD system
DE102010016471A1 Apparatus and method for simultaneously depositing multiple semiconductor layers in multiple process chambers
DE102010016477A1 A thermal treatment method comprising a heating step, a treatment step and a cooling step
DE102010000554A1 MOCVD reactor with a locally different to a Wärmeableitorgan coupled ceiling plate
DE102010000480A1 Device for producing an aerosol, comprises an injector for introducing small material particles into a carrier gas stream, a thinner, which is line-connected with the injector, and an evaporator, which is line-connected with the thinner
DE102010000479A1 Device for homogenizing a vaporized aerosol and device for depositing an organic layer on a substrate with such a homogenizing device
DE102010000447A1 Coating device and method for operating a coating device with a screen plate
DE102010000388A1 Gas inlet element with baffle plate arrangement
DE102009044276A1 CVD reactor with multi-zone gas cushion substrate holder
DE102009043960A1 CVD reactor
DE102009043848A1 CVD method and CVD reactor
DE102009043840A1 CVD reactor with strip-like gas inlet zones and method for depositing a layer on a substrate in such a CVD reactor
DE102009025971A1 Method for setting up an epitaxial reactor
DE102009003781A1 A method for depositing a thin-film polymer in a low pressure gas phase
DE102008055582A1 MOCVD reactor with cylindrical gas inlet member
DE102008037387A1 Method and device for depositing laterally structured layers by means of a shadow mask held magnetically on a substrate holder
DE102008026974A1 Method and apparatus for depositing thin layers of polymeric para-xylylenes or substituted para-xylylenes
CN101636813A Novel plasma system for improved process capability