| # | Country | Total Patents | |
|---|---|---|---|
| #1 | United States | 22 |
| # | Industry | |
|---|---|---|
| #1 | Computer technology | |
| #2 | Semiconductors | |
| #3 | Electrical machinery and energy | |
| #4 | Micro-structure and nano-technology | |
| #5 | Audio-visual technology | |
| #6 | Measurement |
| # | Technology | |
|---|---|---|
| #1 | Static stores | |
| #2 | Semiconductor devices | |
| #3 | Magnets and transformers | |
| #4 | Nanostructure applications | |
| #5 | Special information storage | |
| #6 | Measuring electric variables |
| # | Name | Total Patents |
|---|---|---|
| #1 | Zheng Yuankai | 22 |
| #2 | Xi Haiwen | 14 |
| #3 | Dimitrov Dimitar V | 12 |
| #4 | Lou Xiaohua | 9 |
| #5 | Wang Dexin | 9 |
| #6 | Gao Zheng | 8 |
| #7 | Tian Wei | 7 |
| #8 | Wang Xiaobin | 7 |
| #9 | Zhu Wenzhong | 4 |
| #10 | Tang Michael Xuefei | 3 |
| Publication | Filing date | Title |
|---|---|---|
| US8582253B1 | Magnetic sensor having a high spin polarization reference layer | |
| US8493693B1 | Perpendicular magnetic recording transducer with AFM insertion layer | |
| US2012119313A1 | Memory cell with phonon-blocking insulating layer | |
| US2010128520A1 | Non volatile memory including stabilizing structures | |
| US2010091563A1 | Magnetic memory with phonon glass electron crystal material |