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APALKOV DMYTRO

Overview
  • Total Patents
    20
About

APALKOV DMYTRO has a total of 20 patent applications. Its first patent ever was published in 2005. It filed its patents most often in United States and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets computer technology, semiconductors and electrical machinery and energy are OHMORI HIROYUKI, YADAV TECHNOLOGY INC and APPLIED SPINTRONICS INC.

Patent filings in countries

World map showing APALKOV DMYTROs patent filings in countries

Patent filings per year

Chart showing APALKOV DMYTROs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Apalkov Dmytro 20
#2 Nikitin Vladimir 11
#3 Tang Xueti 7
#4 Druist David 5
#5 Krounbi Mohamad Towfik 5
#6 Khvalkovskiy Alexey Vasilyevitch 5
#7 Huai Yiming 4
#8 Watts Steven M 4
#9 Driskill-Smith Alexander A G 2
#10 Diao Zhitao 2

Latest patents

Publication Filing date Title
US2014175577A1 Method and system for providing vertical spin transfer switched magnetic junctions and memories using such junctions
US2014175582A1 Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy
US2014151830A1 Method and system for providing magnetic junctions having a graded magnetic free layer
US2012299620A1 Method and system for providing spin transfer based logic devices
US2014225643A1 Method and system for providing a nonvolatile logic array
US2013009260A1 Method and system for providing a magnetic junction using half metallic ferromagnets
US2012319221A1 Method and system for providing a magnetic junction configured for precessional switching using a bias structure
US2013155754A1 Magnetic memory including magnetic memory cells integrated with a magnetic shift register and methods thereof
US2013154034A1 Method and system for setting a pinned layer in a magnetic tunneling junction
US2011254585A1 Method and system for providing spin transfer based logic devices
US2011141804A1 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
US2012170357A1 Method and system for providing multiple logic cells in a single stack
US2012168885A1 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
US2012112295A1 Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements
US2011102948A1 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
US2007085068A1 Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells
US2007019337A1 Magnetic elements having improved switching characteristics and magnetic memory devices using the magnetic elements