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APPLIED SPINTRONICS INC

Overview
  • Total Patents
    19
About

APPLIED SPINTRONICS INC has a total of 19 patent applications. Its first patent ever was published in 2004. It filed its patents most often in United States. Its main competitors in its focus markets computer technology, semiconductors and micro-structure and nano-technology are YADAV TECHNOLOGY INC, OHMORI HIROYUKI and APALKOV DMYTRO.

Patent filings in countries

World map showing APPLIED SPINTRONICS INCs patent filings in countries
# Country Total Patents
#1 United States 19

Patent filings per year

Chart showing APPLIED SPINTRONICS INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Hong Liubo 8
#2 Tong Ru-Ying 8
#3 Horng Cheng T 7
#4 Wang Po-Kang 6
#5 Guo Yimin 4
#6 Chen Mao-Min 4
#7 Yang Hsu Kai 4
#8 Shi Xizeng 4
#9 Min Tai 4
#10 Shi Xi Zeng 3

Latest patents

Publication Filing date Title
US2006234445A1 MTJ read head with sidewall spacers
US2006227597A1 World line segment select transistor on word line current source side
US2006221673A1 Highly efficient segmented word line MRAM array
US2006208296A1 Structure and method to fabricate high performance MTJ devices for MRAM applications
US2006211198A1 Structure and method to fabricate high performance MTJ devices for MRAM applications
US2006028862A1 Magnetic random access memory array with proximate read and write lines cladded with magnetic material
US2006014306A1 Magnetic random access memory array with thin conduction electrical read and write lines
US2006013038A1 Adaptive algorithm for MRAM manufacturing
US2004233760A1 Magnetic random access memory array with coupled soft adjacent magnetic layer
US2005260773A1 MRAM cell structure and method of fabrication
US6960480B1 A method of forming a magnetic tunneling junction (mtj) mram device and a tunneling magnetoresistive (tmr) read head
US2005254293A1 Structure/method to fabricate a high performance magnetic tunneling junction MRAM
US2005226052A1 Oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM
US2005219895A1 Magnetic random access memory array with free layer locking mechanism
US2005221511A1 MRAM arrays with reduced bit line resistance and method to make the same