Learn more

SHENZHEN FANGDA GUOKE OPTOELEC

Overview
  • Total Patents
    15
About

SHENZHEN FANGDA GUOKE OPTOELEC has a total of 15 patent applications. Its first patent ever was published in 2007. It filed its patents most often in China. Its main competitors in its focus markets semiconductors are CHIYOU LSI GIJUTSU KENKYU KUMI, QINHUANGDAO JINGHE SCIENCE AND TECH RESEARCH INSTITUTE CO LTD and SHENZHEN LIZHEN SEMICONDUCTOR CO LTD.

Patent filings in countries

World map showing SHENZHEN FANGDA GUOKE OPTOELECs patent filings in countries
# Country Total Patents
#1 China 15

Patent filings per year

Chart showing SHENZHEN FANGDA GUOKE OPTOELECs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Yuhui Ding 3
#2 Zhiwu Wang 3
#3 Xuefeng Xie 2
#4 Jianchun Xie 2
#5 Xinjian Wang 1
#6 Xionglue Xie 1
#7 Hongying Ouyang 1
#8 Peixi Weng 1
#9 Aihua Guo 1
#10 Gang Li 1

Latest patents

Publication Filing date Title
CN101471405A Method for preparing high brightness right-loading LED chip
CN101471404A Method for improving chip light-emitting efficiency and method for preparing sapphire graphical substrate
CN101471412A Method for making high brightness LED chip
CN101471271A Rapid detection method for gallium nitride epitaxial slice
CN101471401A Epitaxial growth method of sapphire substrate LED chip
CN101471403A Method for reusing LED waste slice
CN101471229A Wafer sorting method
CN101471400A Method for preparing iso-temperature double-buffering layer of sapphire substrate
CN101468352A Method for cleaning sapphire substrate
CN101471402A Method for preparing graphical substrate of GaN-based LED by silicon 001 crystal face
CN101471406A LED chip and preparation method thereof
CN101469446A Method for lateral epitaxial overgrowth of gallium nitride on silicon substrate
CN101469251A Sapphire substrate polishing solution and method for producing the same
CN101471245A Method for transversal epitaxial growth of gallium nitride on Si substrate
CN101471289A Method for cutting back plating wafer