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YILMAZ HAMZA

Overview
  • Total Patents
    33
  • GoodIP Patent Rank
    192,322
About

YILMAZ HAMZA has a total of 33 patent applications. Its first patent ever was published in 2003. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and Australia. Its main competitors in its focus markets semiconductors and micro-structure and nano-technology are INFINEON TECHNOLOGIES BIPOLAR GMBH & CO KG, HIDAKA OSAMU and CARSEM SEMICONDUCTOR SDN BHD.

Patent filings in countries

World map showing YILMAZ HAMZAs patent filings in countries

Patent filings per year

Chart showing YILMAZ HAMZAs patent filings per year from 1900 to 2020

Focus technologies

Top inventors

# Name Total Patents
#1 Yilmaz Hamza 33
#2 Chen John 7
#3 Bhalla Anup 7
#4 Ng Daniel 5
#5 Calafut Daniel 4
#6 Lu Jun 4
#7 Xue Yan Xun 4
#8 Lu Ming-Chen 3
#9 Guan Lingpeng 3
#10 Wang Xiaobin 3

Latest patents

Publication Filing date Title
WO2019204829A1 Small pitch super junction mosfet structure and method
US2015349091A1 Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
US8952509B1 Stacked multi-chip bottom source semiconductor device and preparation method thereof
US2014361420A1 Hybrid packaged lead frame based multi-chip semiconductor device with multiple semiconductor chips and multiple interconnecting structures
US2014264802A1 Semiconductor device with thick bottom metal and preparation method thereof
US2013200451A1 Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
US2013020635A1 Semiconductor device with field threshold MOSFET for high voltage termination
US2011227207A1 Stacked dual chip package and method of fabrication
US2011291186A1 Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
US2010314682A1 Configurations and methods for manufacturing devices with trench-oxide-nano-tube super-junctions
US2010314659A1 Nanotube semiconductor devices
US2006284276A1 High voltage semiconductor devices with JFET regions containing dielectrically isolated junctions
US2006076629A1 Semiconductor devices with isolation and sinker regions containing trenches filled with conductive material
US7405452B2 Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics
AU2003304708A1 Self-aligned trench mos junctions field-effect transistor for high-frequency applications