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XIE RUILONG

Overview
  • Total Patents
    15
About

XIE RUILONG has a total of 15 patent applications. Its first patent ever was published in 2011. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors are LAIBAO SCI & TECH CO LTD, LATTICEPOWER (JIANGXI) CORP and CHIPSIP TECHNOLOGY CO LTD.

Patent filings in countries

World map showing XIE RUILONGs patent filings in countries
# Country Total Patents
#1 United States 15

Patent filings per year

Chart showing XIE RUILONGs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Xie Ruilong 15
#2 Cai Xiuyu 5
#3 Khakifirooz Ali 4
#4 Cheng Kangguo 4
#5 Miller Robert 3
#6 Fan Su Chen 3
#7 Balasubramanian Pranatharthiharan Haran 2
#8 Horak David V 2
#9 Cai Jr Xiuyu 2
#10 Miller Robert J 2

Latest patents

Publication Filing date Title
US2014077274A1 Integrated circuits with improved gate uniformity and methods for fabricating same
US2014070285A1 Methods of forming semiconductor devices with self-aligned contacts and the resulting devices
US8541274B1 Methods of forming 3-D semiconductor devices with a nanowire gate structure wherein the nanowire gate structure is formed after source/drain formation
US8580634B1 Methods of forming 3-D semiconductor devices with a nanowire gate structure wherein the nanowire gate structure is formed prior to source/drain formation
US8524592B1 Methods of forming semiconductor devices with self-aligned contacts and low-k spacers and the resulting devices
US2014008720A1 Integrated circuit and method for fabricating the same having a replacement gate structure
US2013328112A1 Semiconductor devices having improved gate height uniformity and methods for fabricating same
US2013328111A1 Recessing and capping of gate structures with varying metal compositions
US2013307087A1 Method for forming a self-aligned contact opening by a lateral etch
US2013187236A1 Methods of Forming Replacement Gate Structures for Semiconductor Devices
US2013187203A1 Formation of the dielectric cap layer for a replacement gate structure
US2013187228A1 FinFET semiconductor devices with improved source/drain resistance and methods of making same
US2013161729A1 Methods of forming isolation structures on FinFET semiconductor devices
US2013078791A1 Semiconductor device fabrication methods with enhanced control in recessing processes
US2013040450A1 Methods of forming a dielectric cap layer on a metal gate structure