| # | Country | Total Patents | |
|---|---|---|---|
| #1 | WIPO (World Intellectual Property Organization) | 16 | |
| #2 | China | 5 | |
| #3 | United States | 2 | |
| #4 | Republic of Korea | 1 |
| # | Industry | |
|---|---|---|
| #1 | Semiconductors | |
| #2 | Electrical machinery and energy | |
| #3 | Optics | |
| #4 | Packaging and shipping |
| # | Technology | |
|---|---|---|
| #1 | Semiconductor devices | |
| #2 | Special electric heating or lighting | |
| #3 | Optical systems | |
| #4 | Transport or storage devices |
| # | Name | Total Patents |
|---|---|---|
| #1 | Wang Duxiang | 9 |
| #2 | Wu Chun-Yi | 8 |
| #3 | Wu Chaoyu | 8 |
| #4 | Chang Chia-Hung | 3 |
| #5 | Xu Chenke | 2 |
| #6 | Chao Chih-Wei | 2 |
| #7 | Li Shuiqing | 2 |
| #8 | Hsu Chen-Ke | 2 |
| #9 | Huang Chun Kai | 2 |
| #10 | Zhang Zhongying | 2 |
| Publication | Filing date | Title |
|---|---|---|
| CN111129247A | Semiconductor light-emitting element | |
| WO2017202329A1 | Light-emitting diode and manufacturing method thereof | |
| CN107195732A | The Polarity Control structure and preparation method of a kind of semiconductor | |
| CN106992231A | Nitride semiconductor device and preparation method thereof | |
| CN106848011A | Gallium nitride based light emitting diode and preparation method thereof | |
| CN106299069A | A kind of laser diode and preparation method thereof |