Learn more

XI'AN LONTEN RENEWABLE ENERGY TECH INC

Overview
  • Total Patents
    14
  • GoodIP Patent Rank
    123,741
  • Filing trend
    ⇩ 100.0%
About

XI'AN LONTEN RENEWABLE ENERGY TECH INC has a total of 14 patent applications. It decreased the IP activity by 100.0%. Its first patent ever was published in 2015. It filed its patents most often in China. Its main competitors in its focus markets semiconductors are ADVANCED POWER ELECTRONICS COR, SHENG LIU and DI LI.

Patent filings in countries

World map showing XI'AN LONTEN RENEWABLE ENERGY TECH INCs patent filings in countries
# Country Total Patents
#1 China 14

Patent filings per year

Chart showing XI'AN LONTEN RENEWABLE ENERGY TECH INCs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Xu Xichang 12
#2 Zhou Hongwei 9
#3 Zhang Yuanyuan 7
#4 Ren Wenzhen 7
#5 Yue Ling 7
#6 Yang Le 6
#7 Liu Ting 6
#8 Xu Yongnian 1

Latest patents

Publication Filing date Title
CN106898555A SJ MOS structures and its manufacture method with soft reverse recovery
CN106920752A Low pressure super node MOSFET grid source aoxidizes Rotating fields and manufacture method
CN106783620A Hyperconjugation VDMOS device structure of anti-EMI filter and preparation method thereof
CN106711047A Low-voltage super-junction MOSFET self-alignment method
CN106783590A Snapback recovers the method and its device architecture of SJ MOS
CN106129119A Domain structure of superjunction power VDMOSFET of integrated schottky diode and preparation method thereof
CN106128956A The preparation method of low cost isolated gate FET (IGBT)
CN106252235A The preparation method of low cost superjunction power field effect pipe
CN106298940A The preparation method of VDMOS integrated ESD structure
CN106206322A The manufacture method of autoregistration low pressure superjunction MOFET
CN105655402A Low-voltage super-junction MOSFET (metal-oxide-semiconductor field effect transistor) terminal structure and method for manufacturing same
CN105489500A Preparation method for super-junction VDMOS and super-junction VDMOS device
CN105551963A Manufacturing method for low-voltage super-junction MOSFET
CN105590844A Super junction structure deep groove manufacturing method