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XI AN SHENGUANG HAORUI PHOTOELECTRIC SCIENCE & TECHNOLOGY CO LTD

Overview
  • Total Patents
    37
  • GoodIP Patent Rank
    50,107
About

XI AN SHENGUANG HAORUI PHOTOELECTRIC SCIENCE & TECHNOLOGY CO LTD has a total of 37 patent applications. Its first patent ever was published in 2013. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, surface technology and coating and environmental technology are SAN AN OPTOELECTRONICS CO LTD, PARK BYOUNG-KEON and HANGZHOU SILAN AZURE CO LTD.

Patent filings in countries

World map showing XI AN SHENGUANG HAORUI PHOTOELECTRIC SCIENCE & TECHNOLOGY CO LTDs patent filings in countries
# Country Total Patents
#1 China 37

Patent filings per year

Chart showing XI AN SHENGUANG HAORUI PHOTOELECTRIC SCIENCE & TECHNOLOGY CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Li Miao 11
#2 Wang Xiaobo 10
#3 Miao Bingyou 8
#4 Huang Hongjia 7
#5 Ning Lei 6
#6 Shang Yibo 4
#7 Chen Qiwei 4
#8 Deng Juewei 4
#9 Zhang Rujing 4
#10 Hu Dan 3

Latest patents

Publication Filing date Title
CN104851945A Vertical-structure LED chip manufacturing method
CN104810447A GaN-based LED electron barrier layer structure and epitaxial growth method
CN104701434A Flip LED chip preparation method
CN104701427A Vertical LED chip preparation method
CN104733571A LED epitaxial growth method
CN104659171A Electron blocking layer structure of photoelectric device
CN104659164A Method for growing photoelectric material and device through two-step method
CN104617174A Insert layer structure of photoelectric device
CN104638073A Quantum well structure of photoelectric device
CN104485399A Epitaxial growth method for improving epitaxial crystal quality
CN104465899A Preparation method for LED perpendicular structure
CN104332544A Epitaxial growth method for improving LED lighting efficiency
CN104282808A Ultraviolet LED extension active area structure growing method
CN104241511A Method for manufacturing high-brightness flip ultraviolet LED chips
CN104269477A Method for manufacturing P-type ohmic contact layer with high ultraviolet transmittance
CN104241464A Epitaxial growth method increasing P-type gallium nitride doping concentration
CN104037274A Epitaxial growth method and structure for LED (Light-Emitting Diode) luminous layer
CN103996768A Multi-quantum-well structure for photoelectric device
CN103996757A Method for improving LED luminance through TiO2 nanometer tube array thin film
CN103996600A Method for improving patterned substrate epitaxy crystalline quality