| # | Country | Total Patents | |
|---|---|---|---|
| #1 | EPO (European Patent Office) | 4 | |
| #2 | United States | 4 | |
| #3 | WIPO (World Intellectual Property Organization) | 4 | |
| #4 | China | 3 | |
| #5 | Republic of Korea | 3 | |
| #6 | Taiwan | 1 |
| # | Industry | |
|---|---|---|
| #1 | Semiconductors | |
| #2 | Surface technology and coating | |
| #3 | Electrical machinery and energy | |
| #4 | Chemical engineering |
| # | Technology | |
|---|---|---|
| #1 | Semiconductor devices | |
| #2 | Mixing | |
| #3 | Coating metallic material | |
| #4 | Electric discharge tubes | |
| #5 | Single-crystal-growth |
| # | Name | Total Patents |
|---|---|---|
| #1 | Chen Jr-Tai | 15 |
| #2 | Kordina Olof | 8 |
| #3 | Janzen Erik | 5 |
| #4 | Janzén Erik | 5 |
| #5 | Chen Jr Tai | 3 |
| #6 | Eriksson Martin | 1 |
| Publication | Filing date | Title |
|---|---|---|
| WO2020249182A1 | Reactor for gas treatment of a substrate | |
| US2018053649A1 | Method to grow a semi-conducting sic layer | |
| KR20200057698A | Heterogeneous structure for high electron mobility transistor and method for manufacturing same | |
| WO2018196948A1 | Interlayer barrier | |
| KR20170137128A | heterostructure and method of its production | |
| CN107210192A | Semiconductor device structure and its production method |