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X FAB SEMICONDUCTOR FOUNDRIES GMBH

Overview
  • Total Patents
    55
  • GoodIP Patent Rank
    27,104
  • Filing trend
    ⇧ 850.0%
About

X FAB SEMICONDUCTOR FOUNDRIES GMBH has a total of 55 patent applications. It increased the IP activity by 850.0%. Its first patent ever was published in 2015. It filed its patents most often in United States, Germany and United Kingdom. Its main competitors in its focus markets semiconductors, measurement and thermal processes are LEEDY GLENN J, CHANGJIANG STORAGE TECH CO LTD and CHANGXIN MEMORY TECH INC.

Patent filings per year

Chart showing X FAB SEMICONDUCTOR FOUNDRIES GMBHs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Gäbler Daniel 7
#2 Gruber Sven 6
#3 Lerner Ralf 6
#4 Knechtel Roy 5
#5 Daniel Gäbler 5
#6 Dempwolf Sophia 3
#7 Victor Sizov 3
#8 Wicht Sebastian 3
#9 Weinberger Stefan 3
#10 Tilo Peter 3

Latest patents

Publication Filing date Title
GB201912344D0 CMOS wavefront sensors
DE102019118270A1 Process for the production of semiconductor components to increase the yield in microtransfer printing
GB201909183D0 Single photon avalanche diode devices
DE102019116019A1 Production of components in substrates via a multi-stage etching process
DE102019110922A1 Trench isolation structure with enlarged electrically conductive side wall
GB201905789D0 Semiconductor device for light detection
DE102019108334A1 ESD protective component and MOS transistor with (at least) one integrated ESD protective component
DE102019106861A1 PROGRAMMABLE READ-ONLY MEMORY DEVICE
DE102018125378B3 Anodic bonding of a glass substrate with contact bushings to a silicon substrate
GB201813179D0 A semiconductor structure
GB202014914D0 Improvements in lens layers for semiconductor devices
GB201813110D0 Improvements in lens layers for semiconductor devices
GB201811530D0 Improvements in and relating to flash memory
GB201810383D0 Anti-reflective layers in semiconductor devices
GB201810251D0 Substrates for III-nitride epitaxy
DE102018105752A1 Electrically modulated photodiode and method for its production
GB201800900D0 Ohmic contacts in semiconductor devices
GB201713530D0 Noff III-nitride high electron mobility transistor
US2017294351A1 Electrically conductive via(s) in a semiconductor substrate and associated production method
GB201610660D0 Thermopile Test Structure And Methods Employing Same