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CHANGXIN MEMORY TECH INC

Overview
  • Total Patents
    780
  • GoodIP Patent Rank
    1,972
  • Filing trend
    ⇧ 441.0%
About

CHANGXIN MEMORY TECH INC has a total of 780 patent applications. It increased the IP activity by 441.0%. Its first patent ever was published in 2017. It filed its patents most often in China, WIPO (World Intellectual Property Organization) and United States. Its main competitors in its focus markets semiconductors, computer technology and optics are RUILI INTEGRATED CIRCUIT CO LTD, SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP and NANYA TECHNOLOGY CORP.

Patent filings in countries

World map showing CHANGXIN MEMORY TECH INCs patent filings in countries
# Country Total Patents
#1 China 646
#2 WIPO (World Intellectual Property Organization) 106
#3 United States 28

Patent filings per year

Chart showing CHANGXIN MEMORY TECH INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 The Inventor Has Waived The Right To Be Cited 47
#2 Yang Zhengjie 15
#3 Wu Binghuan 15
#4 Zhang Liang 14
#5 Ning Shu-Liang 13
#6 Cai Changyi 12
#7 Ping Erxuan 12
#8 Zhu Yiming 12
#9 Zhou Bukang 11
#10 Liu Chih Cheng 10

Latest patents

Publication Filing date Title
WO2021073133A1 Semiconductor packaging method, semiconductor package structure, and package body
WO2021068551A1 Data storage and comparison method, storage and comparison circuit apparatus, and semiconductor memory
WO2021077780A1 Read operation circuit, semiconductor memory and read operation method
WO2021077783A1 Write operation circuit, semiconductor memory, and write operation method
WO2021077779A1 Write operation circuit, semiconductor memory, and write operation method
WO2021077773A1 Write operation circuit, semiconductor memory, and write operation method
WO2021077784A1 Write operation circuit, semiconductor memory device, and write operation method
WO2021077778A1 Read operation circuit, semiconductor memory, and read operation method
WO2021077774A1 Write operation circuit, semiconductor memory and write operation method
WO2021077776A1 Read operation circuit, semiconductor memory and read operation method
WO2021077775A1 Read operation circuit, semiconductor memory and read operation method
WO2021077777A1 Read operation circuit, semiconductor memory and read operation method
WO2021073135A1 Semiconductor packaging method, semiconductor packaging structure, and packages
WO2021073134A1 Semiconductor packaging method, semiconductor packaging structure and packaging body
WO2021073127A1 Output driving circuit and memory
WO2021073126A1 In-chip reference current generation circuit
WO2021073128A1 Test circuit and memory chip using the test circuit
WO2021056957A1 Power supply module, and memory device
WO2021056958A1 Anti-fuse storage unit circuit and array circuit, and read/write method therefor
WO2021056887A1 Dram memory