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SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP

Overview
  • Total Patents
    3,056
  • GoodIP Patent Rank
    688
  • Filing trend
    ⇧ 3.0%
About

SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP has a total of 3,056 patent applications. It increased the IP activity by 3.0%. Its first patent ever was published in 2008. It filed its patents most often in China and United States. Its main competitors in its focus markets semiconductors, computer technology and basic communication technologies are RUILI INTEGRATED CIRCUIT CO LTD, RENESAS TECH CORP and NANYA TECHNOLOGY CORP.

Patent filings in countries

World map showing SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORPs patent filings in countries
# Country Total Patents
#1 China 2,957
#2 United States 99

Patent filings per year

Chart showing SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORPs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Qian Wensheng 137
#2 Yang Guangjun 134
#3 Li Hao 104
#4 Wang Hui 98
#5 Cao Zigui 94
#6 Chen Hong 93
#7 Liu Donghua 77
#8 Duan Wenting 71
#9 Chen Hualun 67
#10 Xu Tao 61

Latest patents

Publication Filing date Title
CN112201660A Forming method of flash memory device
CN112185965A Mask read-only memory
CN112255883A Method for improving perpendicularity of photoetching pattern
CN112289925A Method for manufacturing magnetic sensor
CN112242398A Method for manufacturing memory
CN112117332A LDMOS device and technological method
CN112289684A Manufacturing method of power device and device
CN112185973A Memory, manufacturing method and operating method of memory
CN112242305A Semiconductor device and method for manufacturing the same
CN112233983A Trench gate power device and preparation method thereof
CN112201583A Method for manufacturing MOSFET (Metal-oxide-semiconductor field Effect transistor) device comprising SGT (silicon germanium transistor) structure
CN112242304A Semiconductor device and method of forming the same
CN112185838A Method for manufacturing test structure
CN112185839A Passivation layer test structure
CN112234096A Split-gate flash memory and preparation method thereof
CN112234028A Method for reducing stress of passivation layer and stress buffer structure of passivation layer
CN112086460A Flash memory and forming method thereof
CN112198921A Reference voltage source circuit
CN112216621A Memory wafer test method and test device
CN112289738A Method for forming metal interconnection structure