Learn more

WUXI CHINA RESOURCES MICROELECTRONICS CO LTD

Overview
  • Total Patents
    41
  • GoodIP Patent Rank
    54,019
  • Filing trend
    0.0%
About

WUXI CHINA RESOURCES MICROELECTRONICS CO LTD has a total of 41 patent applications. It increased the IP activity by 0.0%. Its first patent ever was published in 2009. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, digital networks and basic communication technologies are PAKAL TECHNOLOGIES LLC, PENDHARKAR SAMEER P and CHEN WEIZE.

Patent filings in countries

World map showing WUXI CHINA RESOURCES MICROELECTRONICS CO LTDs patent filings in countries
# Country Total Patents
#1 China 41

Patent filings per year

Chart showing WUXI CHINA RESOURCES MICROELECTRONICS CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Jiang Zhengyong 10
#2 Gan Xinhui 10
#3 Zhang Weimin 9
#4 Zhu Jiacong 9
#5 Jin Xingcheng 9
#6 Yu Shaoxin 8
#7 Gu Yong 6
#8 Chen Tian 6
#9 Ji Jianxin 5
#10 Chen Xiaoliang 4

Latest patents

Publication Filing date Title
CN111987044A Method for manufacturing semiconductor device and semiconductor device
CN111968984A Preparation method of flash memory
CN111627998A Semiconductor device preparation method
CN111628008A Silicon carbide schottky diode
CN111627802A Preparation method of silicon carbide device
CN111326589A Diode structure and preparation method thereof
CN111009469A Semiconductor-on-insulator component and method for manufacturing same
CN110957218A Method for manufacturing semiconductor component and semiconductor component
CN110911282A Method for manufacturing N-channel semiconductor component and N-channel semiconductor component
CN110739293A sub-programmable cell and semiconductor device integrated with sub-programmable cell
CN110098155A The compound surface passivation structure and its manufacturing method of semiconductor devices
CN110061055A The production method of silicon carbide compound MOS device and silicon carbide compound MOS device
CN109995351A Switch integrated device
CN109994376A Ohmic contact structure formed in silicon carbide substrates and forming method thereof
CN109979798A Sic wafer wet etching method
CN109979992A The manufacturing method of barrier metal structure and barrier metal structure
CN109979829A Silicon carbide activates method for annealing
CN109962006A SiC wafer on-line machining method
CN109727906A The processing method of the shallow groove isolation structure of N-type semiconductor component
CN107452621A Fast recovery diode and its manufacture method