PENDHARKAR SAMEER P has a total of 13 patent applications. Its first patent ever was published in 2007. It filed its patents most often in United States and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors and basic communication technologies are CHEN WEIZE, PAKAL TECHNOLOGIES LLC and CAMBRIDGE ELECTRONICS INC.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 11 | |
#2 | WIPO (World Intellectual Property Organization) | 2 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Basic communication technologies |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Pulse technique |
# | Name | Total Patents |
---|---|---|
#1 | Pendharkar Sameer P | 13 |
#2 | Hu Binghua | 3 |
#3 | Lin John | 2 |
#4 | Hower Philip L | 1 |
#5 | Chen Xinfen | 1 |
#6 | Zhang Yongxi | 1 |
#7 | Denison Marie | 1 |
#8 | Merchant Steven L | 1 |
Publication | Filing date | Title |
---|---|---|
US2012098065A1 | Low resistance LDMOS with reduced gate charge | |
US2012098062A1 | Hybrid active-field gap extended drain MOS transistor | |
US2012098098A1 | Stacked ESD clamp with reduced variation in clamp voltage | |
US2011180842A1 | High voltage SCRMOS in BiCMOS process technologies | |
US2011180870A1 | High voltage SCRMOS in BiCMOS process technologies | |
US2010032756A1 | Buried floating layer structure for improved breakdown | |
US2010032757A1 | Bi-directional DMOS with common drain | |
US2010032794A1 | High voltage diode with reduced substrate injection |