Learn more

HITACHI POWER SEMICONDUCTOR DEVICE LTD

Overview
  • Total Patents
    249
  • GoodIP Patent Rank
    7,921
  • Filing trend
    ⇧ 8.0%
About

HITACHI POWER SEMICONDUCTOR DEVICE LTD has a total of 249 patent applications. It increased the IP activity by 8.0%. Its first patent ever was published in 2000. It filed its patents most often in Japan, WIPO (World Intellectual Property Organization) and China. Its main competitors in its focus markets semiconductors, electrical machinery and energy and basic communication technologies are INFINEON TECHNOLOGIES AUSTRIA, ISAHAYA ELECTRONICS CORP and DISNEY DONALD R.

Patent filings per year

Chart showing HITACHI POWER SEMICONDUCTOR DEVICE LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Mori Mutsuhiro 65
#2 Ishimaru Tetsuya 49
#3 Furukawa Tomoyasu 36
#4 Shiraishi Masaki 30
#5 Kurita Shinichi 29
#6 Sakano Junichi 28
#7 Morita Toshiaki 23
#8 Takeuchi Yujiro 22
#9 Miyoshi Tomoyuki 22
#10 Masuda Toru 19

Latest patents

Publication Filing date Title
WO2021079735A1 Semiconductor device, rectifying element using same, and alternator
WO2021049090A1 Semiconductor device and power conversion device
WO2021049091A1 Electric power conversion device and railway vehicle electric system
WO2021014692A1 Power semiconductor module
JP2020194911A Semiconductor device
JP2020178429A Motor drive device and outdoor equipment of air conditioner using the same
JP2020141023A Semiconductor device
JP2020124030A Power semiconductor module and electric power conversion device using the same
JP2020107750A Semiconductor device and alternator using the same
JP2020107627A Semiconductor device and manufacturing method of semiconductor device
JP2020087990A Semiconductor device and power conversion apparatus using the same
JP2020080387A Semiconductor device and power converter using the same
JP2020048361A Power conversion apparatus
JP2020035812A Semiconductor device and power converter
JP2020022240A Current detection device
JP2020017707A Method for manufacturing semiconductor device, semiconductor device, solder sheet, and method for manufacturing the same
JP2020009979A Semiconductor device and manufacturing method thereof
JP2019216202A Manufacturing method of silicon carbide semiconductor device and silicon carbide semiconductor inspection device
JP2019201032A Manufacturing method for semiconductor device
JP2019197816A Power semiconductor module