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AVOGY INC

Overview
  • Total Patents
    114
  • GoodIP Patent Rank
    24,165
About

AVOGY INC has a total of 114 patent applications. Its first patent ever was published in 2012. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and China. Its main competitors in its focus markets semiconductors, electrical machinery and energy and environmental technology are TRANSPHORM JAPAN INC, YANGZHOU GUOYANG ELECTRONIC CO LTD and INFINEON TECHNOLOGIES AMERICAS CORP.

Patent filings in countries

World map showing AVOGY INCs patent filings in countries

Patent filings per year

Chart showing AVOGY INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Nie Hui 73
#2 Kizilyalli Isik C 68
#3 Brown Richard J 50
#4 Bour David P 48
#5 Edwards Andrew P 47
#6 Prunty Thomas R 44
#7 Disney Donald R 37
#8 Romano Linda 37
#9 Kizilyalli Isik 12
#10 Shah Hemal N 11

Latest patents

Publication Filing date Title
US2016241148A1 Method and system for integrated power supply with accessory functions
US2016190954A1 Method and system for bridgeless ac-dc converter
US2016190296A1 Gallium nitride based high electron mobility transistor including an aluminum gallium nitride barrier layer
US2015340271A1 GaN power device with solderable back metal
WO2015138880A1 Adaptive synchronous switching in a resonant converter
US2015255582A1 InGaN ohmic source contacts for vertical power devices
US2015102360A1 Bondable top metal contacts for gallium nitride power devices
US2014374769A1 GaN-based Schottky barrier diode with algan surface layer
US2016072317A1 Method and system for power provisioning
US2015357919A1 Method and system for variable output power supply
US2014287570A1 Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode
US2015263639A1 Adaptive synchronous switching in a resonant converter
US2015263628A1 Resonant converter and control
US2015155775A1 AC-DC converter with adjustable output
US2015137134A1 Method and system for interleaved boost converter with co-packaged gallium nitride power devices
US2015129886A1 Gallium nitride field effect transistor with buried field plate protected lateral channel
US2015123138A1 High power gallium nitride electronics using miscut substrates
US2014051236A1 Gan-based schottky barrier diode with field plate
US8947154B1 Method and system for operating gallium nitride electronics
WO2014028268A2 Method of fabricating a gallium nitride merged p-i-n schottky (mps) diode by regrowth and etch back