US2016241148A1
|
|
Method and system for integrated power supply with accessory functions
|
US2016190954A1
|
|
Method and system for bridgeless ac-dc converter
|
US2016190296A1
|
|
Gallium nitride based high electron mobility transistor including an aluminum gallium nitride barrier layer
|
US2015340271A1
|
|
GaN power device with solderable back metal
|
WO2015138880A1
|
|
Adaptive synchronous switching in a resonant converter
|
US2015255582A1
|
|
InGaN ohmic source contacts for vertical power devices
|
US2015102360A1
|
|
Bondable top metal contacts for gallium nitride power devices
|
US2014374769A1
|
|
GaN-based Schottky barrier diode with algan surface layer
|
US2016072317A1
|
|
Method and system for power provisioning
|
US2015357919A1
|
|
Method and system for variable output power supply
|
US2014287570A1
|
|
Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode
|
US2015263639A1
|
|
Adaptive synchronous switching in a resonant converter
|
US2015263628A1
|
|
Resonant converter and control
|
US2015155775A1
|
|
AC-DC converter with adjustable output
|
US2015137134A1
|
|
Method and system for interleaved boost converter with co-packaged gallium nitride power devices
|
US2015129886A1
|
|
Gallium nitride field effect transistor with buried field plate protected lateral channel
|
US2015123138A1
|
|
High power gallium nitride electronics using miscut substrates
|
US2014051236A1
|
|
Gan-based schottky barrier diode with field plate
|
US8947154B1
|
|
Method and system for operating gallium nitride electronics
|
WO2014028268A2
|
|
Method of fabricating a gallium nitride merged p-i-n schottky (mps) diode by regrowth and etch back
|