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SUZHOU NANOJOIN PHOTONICS CO LTD

Overview
  • Total Patents
    27
  • GoodIP Patent Rank
    100,636
  • Filing trend
    ⇩ 80.0%
About

SUZHOU NANOJOIN PHOTONICS CO LTD has a total of 27 patent applications. It decreased the IP activity by 80.0%. Its first patent ever was published in 2010. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, optics and surface technology and coating are FUJIAN PRIMA OPTOELECTRONICS CO LTD, SAXLER ADAM WILLIAM and HC SEMITEK SUZHOU CO LTD.

Patent filings in countries

World map showing SUZHOU NANOJOIN PHOTONICS CO LTDs patent filings in countries
# Country Total Patents
#1 China 27

Patent filings per year

Chart showing SUZHOU NANOJOIN PHOTONICS CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Wang Hui 22
#2 Wang Huaibing 21
#3 Cai Jin 14
#4 Nan Qi 12
#5 Fu Hua 9
#6 Wu Yue 6
#7 Feng Meixin 5
#8 Wu Si 4
#9 Kong Jing 3
#10 Huaibing Wang 2

Latest patents

Publication Filing date Title
CN109065688A A kind of high light efficiency LED chip and preparation method thereof
CN109216518A Antistatic LED chip preparation method and applications
CN109216510A A kind of epitaxial wafer growth method delaying LED stress
CN109216517A A kind of processing method improving LED wavelength hit rate
CN109216530A It is a kind of can be improved solidify after LED lamp bead reliability preprocess method
CN109216524A A kind of blue-light LED chip back plating dbr structure and preparation method thereof
CN106086810A Regulation MOCVD chamber pressure overcomes the method and system on LED epitaxial structure mist limit
CN106299060A A kind of p-type GaN epitaxial layer preparation method having low-resistance
CN104790030A Method for improving GaN epitaxial yield after MOCVD outage
CN104638075A Method for preparing epitaxial structure capable of increasing LED (light-emitting diode) brightness
CN104638076A LED (light-emitting diode) epitaxial structure capable of increasing LED backward impedance and preparation method thereof
CN104409319A Preparation method for growing high-quality GaN buffer layer on graphene substrate
CN104319317A Epitaxial production method capable of effectively improving P-GaN hole injection layer quality
CN104319321A Intermittent-annealing isothermal-growth multi-quantum well LED extension structure and manufacturing method thereof
CN104201260A LED epitaxial structure capable of adjusting In content in gradient quantum barrier layer by temperature control
CN103846001A MOCVD (Metal Organic Chemical Vapor Deposition) tail gas treatment system and method
CN103824796A Graphite bearing disc for LED epitaxial process, and matching substrate thereof
CN103730554A Growing method for GaN-based LED epitaxial wafer
CN103633210A LED epitaxial wafer and application thereof
CN103633209A LED (light emitting diode) epitaxy structure and application thereof